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UCC21732-Q1

ACTIVE

Automotive 5.7-kVrms ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiCFETs

Product details

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5700 Working isolation voltage (VIOWM) (Vrms) 2121 Transient isolation voltage (VIOTM) (VPK) 8000 Power switch IGBT, SiCFET Peak output current (A) 10 Features Active miller clamp, Fault reporting, Integrated analog to PWM sensor, Power good, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 33 Output VCC/VDD (min) (V) 13 Input VCC (min) (V) 3 Input VCC (max) (V) 5.5 TI functional safety category Functional Safety Quality-Managed Propagation delay time (µs) 0.09 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bus voltage (max) (V) 2121 Rise time (ns) 28 Fall time (ns) 24 Undervoltage lockout (typ) (V) 12
SOIC (DW) 16 106.09 mm² 10.3 x 10.3
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active miller clamp
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • 8000VPK VIOTM and 2121VPK VIORM Reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5700VRMS isolation for 1 minute per UL1577
  • 5.7kVRMS single channel isolated gate driver
  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 3A
    • Device CDM ESD classification level C3
  • SiC MOSFETs and IGBTs up to 2121Vpk
  • 33V maximum output drive voltage (VDD-VEE)
  • ±10A drive strength and split output
  • 150V/ns minimum CMTI
  • 270ns response time fast overcurrent protection
  • External active miller clamp
  • Internal 2-level turn-off when fault happens
  • Isolated analog sensor with PWM output for
    • Temperature sensing with NTC, PTC or thermal diode
    • High voltage DC-Link or phase voltage
  • Alarm FLT on over current and reset from RST/EN
  • Fast enable/disable response on RST/EN
  • Reject <40ns noise transient and pulse on input pins
  • 12V VDD UVLO with power good on RDY
  • Inputs/outputs with over/under-shoot transient voltage Immunity up to 5V
  • 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
  • SOIC-16 DW package with creepage and clearance distance > 8mm
  • Operating junction temperature –40°C to 150°C
  • Safety-related certifications:
    • 8000VPK VIOTM and 2121VPK VIORM Reinforced Isolation per DIN EN IEC 60747-17 (VDE 0884-17)
    • 5700VRMS isolation for 1 minute per UL1577

The UCC21732-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

The UCC21732-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 2121V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. The UCC21732-Q1 has up to ±10A peak source and sink current.

The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 1.5kVRMS working voltage, 12.8kVPK surge immunity with longer than 40 years Isolation barrier life, as well as providing low part-to-part skew , >150V/ns common mode noise immunity (CMTI).

The UCC21732-Q1 includes the state-of-art protection features, such as fast overcurrent and short circuit detection, shunt current sensing support, fault reporting, active miller clamp, input and output side power supply UVLO to optimize SiC and IGBT switching behavior and robustness. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size and cost.

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Technical documentation

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Type Title Date
* Data sheet UCC21732-Q1 Automotive 10A Source/Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection, Isolated Analog Sensing and High-CMTI datasheet (Rev. C) PDF | HTML 18 Jan 2024
Application brief Understanding the Short Circuit Protection for Silicon Carbide MOSFETs (Rev. C) PDF | HTML 08 Sep 2023
User guide UCC217xx and ISO5x5x Half-Bridge EVM User's Guide for Wolfspeed 1200-V SiC 01 Sep 2023
Certificate UCC217xx/-Q1 CQC Certificate of Product Certification 07 Jun 2023
Application note HEV/EV Traction Inverter Design Guide Using Isolated IGBT and SiC Gate Drivers (Rev. B) PDF | HTML 21 Oct 2022
Certificate VDE Certificate for Reinforced Isolation for DIN EN IEC 60747-17 (Rev. R) 12 Jul 2022
Application brief The Use and Benefits of Ferrite Beads in Gate Drive Circuits PDF | HTML 16 Dec 2021
E-book Ein Techniker-Leitfaden für Industrieroboter-Designs 25 Mar 2020
E-book E-book: An engineer’s guide to industrial robot designs 12 Feb 2020
Application note Performance of the Analog PWM Channel in Smart Gate Drivers 16 Jan 2020
Design guide SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing 18 Dec 2019
User guide UCC217xx Family Driving and Protecting SiC and IGBT Power Modules and Transistor (Rev. B) 09 Sep 2019
Technical article Eight questions about monitoring and protection in hybrid and electric vehicles PDF | HTML 22 May 2019
Application brief Why is high UVLO important for safe IGBT & SiC MOSFET power switch operation 30 Jan 2019

Design & development

For additional terms or required resources, click any title below to view the detail page where available.

Evaluation board

UCC21732QDWEVM-025 — Driving and protection evaluation board for SiC and IGBT transistors and power modules

The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation (...)

User guide: PDF
Not available on TI.com
Simulation model

UCC21732 PSpice Transient Model

SLUM663.ZIP (65 KB) - PSpice Model
Simulation model

UCC21732 Unencrypted PSPICE Transient Model

SLUM717.ZIP (6 KB) - PSpice Model
Calculation tool

SLUC695 UCC217xx XL Calculator Tool

Supported products & hardware

Supported products & hardware

Products
Isolated gate drivers
UCC21710-Q1 Automotive 5.7kVrms 10A single-channel isolated gate driver with overcurrent protection for IGBT/SiC UCC21732-Q1 Automotive 5.7-kVrms ±10A single-channel isolated gate driver with 2-level turn off for IGBT/SiCFETs UCC21736-Q1 Automotive 5.7kVrms, ±10A isolated single-channel gate driver with active short circuit for IGBT/SiC UCC21739-Q1 Automotive 3kVrms, ±10A single-channel isolated gate driver w/ isolated analog sensing for IGBT/SiC UCC21750 5.7kVrms ±10A, single-channel isolated gate driver w/ DESAT & internal miller clamp for IGBT/SiCFETs UCC21750-Q1 Automotive 5.7kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC UCC21759-Q1 Automotive 3.0kVrms, ±10A single-channel isolated gate driver w/ DESAT & internal clamp for IGBT/SiC
Simulation tool

PSPICE-FOR-TI — PSpice® for TI design and simulation tool

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
Reference designs

PMP23223 — Smart isolated gate driver with bias supply reference design

This reference design demonstrates the combination of UCC21732 gate driver with a UCC14xxx series bias supply. This design can be used to drive a variety of power switches, including connecting directly to a Wolfspeed Silicon Carbide (SiC) field-effect transistor (FET) module. This reference design (...)
Test report: PDF
Reference designs

TIDA-020030 — SiC/IGBT isolated gate driver reference design with thermal diode and sensing FET

This reference design is an IGBT or SiC isolated gate driver power stage driving a IGBT module with advanced protection features. The design consists of a single phase power stage from a traction inverter supporting high level of safety features. The IGBT module has integrated thermal diode for (...)
Design guide: PDF
Schematic: PDF
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