Información de empaque
| Encapsulado | Pines SOIC (D) | 8 |
| Rango de temperatura de funcionamiento (℃) -40 to 85 |
| Cant. de paquetes | Transportador 75 | TUBE |
Características para TLC1078
- Power Dissipation as Low as 10 uW Typ Per Amplifier
- Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min
- VIO...450 uV/850 uV Max in DIP and Small-Outline Package (TLC1078/79)
- Input Offset Voltage Drift...0.1 uV/Month Typ, Including the First 30 Days
- High-impedance LinCMOSTM Inputs
- IIB = 0.6 pA Typ
- High Open-Loop Gain...800000 Typ
- Output Drive Capability > 20 mA
- Slew Rate...47 V/ms Typ
- Common-Mode Input Voltage Range Extends Below the Negative Rail
- Output Voltage Range Includes Negative Rail
- On-Chip ESD-Protection Circuitry
- Small-Outline Package Option Also Available in Tape and Reel
LinCMOS is a trademark of Texas Instruments Incorporated.
Descripción de TLC1078
The TLC107x operational amplifiers offer ultra-low offset voltage, high gain, 110-kHz bandwidth, 47-V/ms slew rate, and just 150-uW power dissipation per amplifier.
With a supply voltage of 1.4 V, common-mode input to the negative rail, and output swing to the negative rail, the TLC107xC is an ideal solution for low-voltage battery-operated systems. The 20-mA output drive capability means that the TLC107x can easily drive small resistive and large capacitive loads when needed, while maintaining ultra-low standby power dissipation.
Since this device is functionally compatible as well as pin compatible with the TLC27L2/4 and TLC27L7/9, the TLC107x easily upgrades existing designs that can benefit from its improved performance.
The TLC107x incorporates internal ESD-protection circuits that will prevent functional failures at voltages up to 2000 V as tested under MIL-PRF-38535, Method 3015.2; however, care should be exercised when handling these devices as exposure to ESD may result in degradation of the device parametric performance. The TLC107x design also inhibits latch-up of the device inputs and outputs even with surge currents as large 100 mA.
The C-suffix devices are characterized for operation from 0°C to 70°C. The I-suffix devices are characterized for operation from -40°C to 85°C. The M-suffix devices are characterized for operation over the full military temperature range of -55°C to 125°C. The wide range of packaging options includes small-outline and chip-carrier versions for high-density system applications.