전원 관리 Power stages 질화 갈륨(GaN) 전력계

LMG3100R017

미리 보기

통합 드라이버를 갖춘 100V 1.7mΩ GaN FET

제품 상세 정보

VDS (max) (V) 100 RDS(on) (mΩ) 1.7 ID (max) (A) 97 Features Built-in bootstrap diode, Integrated FET, Top-side cooled
VDS (max) (V) 100 RDS(on) (mΩ) 1.7 ID (max) (A) 97 Features Built-in bootstrap diode, Integrated FET, Top-side cooled
UNKNOWN (VBE) 15 See data sheet
  • Integrated 1.7mΩ GaN FET and driver
  • Interated high-side level shift and bootstrap
  • Two LGM3100 can form a half-bridge
    • No external level shifter needed
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • High slew rate switching with low ringing
  • Gate driver capable of up to 10MHz switching
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage lockout protection
  • Excellent propagation delay (29.5ns typical) and matching (12ns typical)
  • Low power consumption
  • Exposed top QFN package for connection to heatsink
  • Integrated 1.7mΩ GaN FET and driver
  • Interated high-side level shift and bootstrap
  • Two LGM3100 can form a half-bridge
    • No external level shifter needed
  • 90V continuous, 100V pulsed voltage rating
  • Package optimized for easy PCB layout
  • 5V external bias power supply
  • Supports 3.3V and 5V input logic levels
  • High slew rate switching with low ringing
  • Gate driver capable of up to 10MHz switching
  • Internal bootstrap supply voltage clamping to prevent GaN FET overdrive
  • Supply rail undervoltage lockout protection
  • Excellent propagation delay (29.5ns typical) and matching (12ns typical)
  • Low power consumption
  • Exposed top QFN package for connection to heatsink

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

The LMG3100 device is a 90V, 97A Gallium Nitride (GaN) with integrated driver. The device consists of a 100V GaN FET driven by a high-frequency GaN FET driver. The LMG3100 incorporates a high side level shifter and bootstrap circuit, so that two LMG3100 devices can be used to form a half bridge without needing an additional level shifter.

GaN FETs provide significant advantages for power conversion as they have near zero reverse recovery and very small input capacitance CISS and output capacitance COSS. All the devices are mounted on a completely bond-wire free package platform with minimized package parasitic elements. The LMG3100 device is available in a 6.5mm × 4mm × 0.89mm lead-free package and can be easily mounted on PCBs.

The TTL logic compatible inputs can support 3.3V and 5V logic levels regardless of the VCC voltage. The proprietary bootstrap voltage clamping technique ensures the gate voltages of the enhancement mode GaN FETs are within a safe operating range.

The device extends advantages of discrete GaN FETs by offering a more user-friendly interface. It is an ideal solution for applications requiring high-frequency, high-efficiency operation in a small form factor.

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기술 문서

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모두 보기2
유형 직함 날짜
* Data sheet LMG3100R017 100V, 97A GaN FET With Integrated Driver datasheet PDF | HTML 2024/01/23
Technical article GaN이 전자 설계를 혁신하는 4가지 중전압 애플리케이션 PDF | HTML 2024/02/20

설계 및 개발

추가 조건 또는 필수 리소스는 사용 가능한 경우 아래 제목을 클릭하여 세부 정보 페이지를 확인하세요.

레퍼런스 디자인

PMP23392 — 48V 오토모티브 애플리케이션용 GaN FET를 사용하는 듀얼 위상 벅 컨버터 레퍼런스 설계

이 레퍼런스 설계는 이중 위상 인터리브 동기 벅 컨버터로 구성된 LM5148-Q1 단상 동기 벅 컨트롤러 2개와 LMG3100R017 GaN FET 4개를 사용합니다. 이 컨버터는 정격 30A의 전류를 부하에 공급할 수 있는 조정된 5V 출력을 생성하고, 60A의 피크 전류 기능을 통해 24Vin~60Vin(정격 48Vin) 사이의 입력 전압을 수락합니다. 이 설계는 6레이어 PCB에 기반을 두고 있으며, 6개 레이어 각각에 대해 2온스 구리가 있습니다. 평가 보드의 크기는 5.0" x 3.4"(127.00mm (...)
Test report: PDF
패키지 다운로드
UNKNOWN (VBE) 15 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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