제품 상세 정보

Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 250000 Sensitivity error (%) 0.3 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
Continuous current (max) (A) 75 Input offset current (±) (max) (mA) 40, 42, 45, 60 Input offset current drift (±) (typ) (µA/°C) 133, 150, 160, 200 Features Alert Function, Digital output alerts MCU when current limit is reached, Externally Driven Zero Current Reference Voltage, Overcurrent protection Supply voltage (max) (V) 5.5 Supply voltage (min) (V) 3 Small-signal bandwidth (Hz) 250000 Sensitivity error (%) 0.3 Sensitivity error drift (±) (max) (ppm/°C) 50 Rating Catalog Operating temperature range (°C) -40 to 125 Creepage (min) (mm) 8.1 Clearance (min) (mm) 8.1 Isolation rating Reinforced Surge isolation voltage (VIOSM) (VPK) 10000
SOIC (DVG) 10 106.09 mm² 10.3 x 10.3
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5kVRMS
    • Reinforced working voltage: 1.3kVDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Propagation delay: 110ns
    • Response time: 1µs
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1
  • High continuous current capability: 80ARMS
  • Robust reinforced isolation
    • Withstand isolation voltage: 5kVRMS
    • Reinforced working voltage: 1.3kVDC
  • High accuracy
    • Sensitivity error: ±0.1%
    • Sensitivity thermal drift: ±20ppm/°C
    • Sensitivity lifetime drift: ±0.2%
    • Offset error: ±0.2mV
    • Offset thermal drift: ±2µV/°C
    • Offset lifetime drift: ±0.2mV
    • Non-linearity: ±0.1%
  • High immunity to external magnetic fields
  • Precision zero-current reference output
  • Fast Response
    • Signal bandwidth: 250kHz
    • Propagation delay: 110ns
    • Response time: 1µs
    • Overcurrent detection response: 100ns
  • Operating supply range: 3V to 5.5V
  • Bidirectional and unidirectional current sensing
  • Multiple sensitivity options:
    • Ranging from 25mV/A to 150mV/A
  • Safety related certifications (planned)
    • UL 1577 Component Recognition Program
    • IEC/CB 62368-1

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 1% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with minimum 8.1mm creepage and clearance provide up to 1.3kVDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

The TMCS1123 is a galvanically isolated Hall-effect current sensor with industry leading isolation and accuracy. An output voltage proportional to the input current is provided with excellent linearity and low drift at all sensitivity options. Precision signal conditioning circuitry with built-in drift compensation is capable of less than 1.4% maximum sensitivity error over temperature and lifetime with no system level calibration, or less than 1% maximum sensitivity error including both lifetime and temperature drift with a one-time calibration at room temperature.

AC or DC input current flows through an internal conductor generating a magnetic field measured by integrated on-chip Hall-effect sensors. Core-less construction eliminates the need for magnetic concentrators. Differential Hall sensors reject interference from stray external magnetic fields. Low conductor resistance increases measurable current ranges up to ±96A while minimizing power loss and easing thermal dissipation requirements. Insulation capable of withstanding 5kVRMS, coupled with minimum 8.1mm creepage and clearance provide up to 1.3kVDC reliable lifetime reinforced working voltage. Integrated shielding enables excellent common-mode rejection and transient immunity.

Fixed sensitivity allows the device to operate from a single 3V to 5.5V power supply, eliminating ratiometry errors and improving supply noise rejection.

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평가 보드

TMCS-A-ADAPTER-EVM — TMCS isolated Hall-effect current sensor adapter card for DVG, DVF, or DZP packages (Hall-effect cur

The TMCS-A-ADAPTER-EVM is an evaluation module (EVM) intended to facilitate rapid, convenient use of TMCS isolated Hall-effect precision current sense monitors that use the DVG, DVF, or DZP packages. This EVM allows the user push up to 90A current through the Hall-input side while measuring the (...)

사용 설명서: PDF | HTML
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평가 보드

TMCS1123EVM — 절연 홀 효과 전류 감지용 TMCS1123 평가 모듈

TMCS1123EVM 평가 모듈(EVM)은 내부 비율 측정 레퍼런스를 사용하는 절연 홀 효과 정밀 전류 감지 모니터인 TMCS1123을 쉽고 빠르게 사용할 수 있도록 설계되었습니다. 이 EVM을 사용하면 강화 절연 장벽을 통해 절연 출력을 측정하는 동시에 홀 입력 측을 통해 최대 작동 전류를 푸시할 수 있습니다. 고정 레이아웃은 대상 회로의 모델로 의도된 것이 아니며, EMI(전자기장) 테스트용으로 배치된 것도 아닙니다. 이 TMCS1123EVM은 단일 인쇄 회로 기판(PCB)으로 구성되어 있으며, 5개의 개별 조각으로 분리 (...)
사용 설명서: PDF | HTML
레퍼런스 디자인

TIDA-010937 — 디지털 인터페이스를 지원하는 절연된 낮은 지연, 높은 PWM 제거 홀 전류 감지 레퍼런스 설계

이 레퍼런스 설계는 최대 ±62A까지, 100ns 미만의 과전류 감지 시간을 지원하는 3상 인버터를 갖춘 안정적인 위상 전류 및 DC 링크 전류 감지를 위한 TMCS1123 정밀 홀 효과 전류 센서를 사용하여 정확한 저지연 강화 절연 양방향 전류 감지 시스템을 보여줍니다. 과전류 임계값은 최대 입력 전류 범위의 2.5배까지 구성할 수 있습니다. 고속 SPI 또는 최대 21MHz 클록의 델타-시그마 변조기를 지원하는 소형 폼 팩터 12비트 A/D 컨버터는 높은 잡음 내성을 가진 3.3V I/O 디지털 인터페이스를 제공합니다. 이 (...)
Design guide: PDF
레퍼런스 디자인

TIDA-010933 — GaN 레퍼런스 설계 기반의 11kW, 양방향, 3상 ANPC

이 레퍼런스 설계는 에너지 저장 기능이 있는 4입력 양방향 1.6kW GaN 기반 마이크로 인버터를 보여줍니다.
Design guide: PDF
레퍼런스 디자인

TIDA-010938 — 7.2-kW, GaN-based single-phase string inverter with battery energy storage system reference design

This reference design is a single phase string Inverter with two string inputs, each able to handle 10PV panels in series and one energy storage system port that can handle batteries stacks from 80V to 500V. The rated power from string inputs to battery storage systems is up to 7.2kW. The (...)
Design guide: PDF
패키지 다운로드
SOIC (DVG) 10 옵션 보기

주문 및 품질

포함된 정보:
  • RoHS
  • REACH
  • 디바이스 마킹
  • 납 마감/볼 재질
  • MSL 등급/피크 리플로우
  • MTBF/FIT 예측
  • 물질 성분
  • 인증 요약
  • 지속적인 신뢰성 모니터링
포함된 정보:
  • 팹 위치
  • 조립 위치

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