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TPD4E110

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Quad 0.45-pF, 5.5-V, ±12-kV ESD protection diode for High Speed Interfaces

Product details

Package name DFN-0603 (X2SON) Peak pulse power (8/20 μs) (max) (W) 35 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.45 Clamping voltage (V) 10 Breakdown voltage (min) (V) 6.5
Package name DFN-0603 (X2SON) Peak pulse power (8/20 μs) (max) (W) 35 Vrwm (V) 5.5 Bi-/uni-directional Uni-Directional Number of channels 4 IO capacitance (typ) (pF) 0.45 Clamping voltage (V) 10 Breakdown voltage (min) (V) 6.5
X2SON (DPW) 4 0.64 mm² 0.8 x 0.8
  • Provides System Level ESD Protection for Low-Voltage IO Interface
  • IO Capacitance 0.45pF (Typ)
  • IEC 61000-4-2 Level 4
    • ±12kV (Contact Discharge)
    • ±15kV (Air Gap Discharge)
  • IEC61000-4-5 (Surge): 2.5A (8/20 µs)
  • DC Breakdown Voltage 6.5V (Min)
  • Ultra Low Leakage Current 1nA (Max)
  • Low ESD Clamping Voltage
  • Industrial Temperature Range: –40°C to 125°C
  • Space Minimizing 0.8mm x 0.8mm DPW Package
  • Provides System Level ESD Protection for Low-Voltage IO Interface
  • IO Capacitance 0.45pF (Typ)
  • IEC 61000-4-2 Level 4
    • ±12kV (Contact Discharge)
    • ±15kV (Air Gap Discharge)
  • IEC61000-4-5 (Surge): 2.5A (8/20 µs)
  • DC Breakdown Voltage 6.5V (Min)
  • Ultra Low Leakage Current 1nA (Max)
  • Low ESD Clamping Voltage
  • Industrial Temperature Range: –40°C to 125°C
  • Space Minimizing 0.8mm x 0.8mm DPW Package

The TPD4E110 is a uni-directional Electrostatic Discharge (ESD) protection device with ultra-low capacitance. The device is constructed with a central ESD clamp and features two hiding diodes per channel to reduce the capacitive loading. Each channel is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110's ultra-low loading capacitance makes the device ideal for protecting high-speed signal pins.

The TPD4E110 is a uni-directional Electrostatic Discharge (ESD) protection device with ultra-low capacitance. The device is constructed with a central ESD clamp and features two hiding diodes per channel to reduce the capacitive loading. Each channel is rated to dissipate ESD strikes above the maximum level specified in the IEC61000-4-2 level 4 international standard. The TPD4E110's ultra-low loading capacitance makes the device ideal for protecting high-speed signal pins.

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Technical documentation

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Type Title Date
* Data sheet TPD4E110 4 Channel Protection Solution for Super-Speed (Up to 6 GBPS) Interface datasheet (Rev. B) PDF | HTML 10 Apr 2014
Application note ESD and Surge Protection for USB Interfaces (Rev. B) PDF | HTML 11 Jan 2024
Application brief ESD Protection for HDMI Applications (Rev. A) PDF | HTML 01 Nov 2023
Selection guide System-Level ESD Protection Guide (Rev. D) 07 Sep 2022
Application note ESD Packaging and Layout Guide (Rev. B) PDF | HTML 18 Aug 2022
White paper Designing USB for short-to-battery tolerance in automotive environments 10 Feb 2016
Analog Design Journal Design Considerations for System-Level ESD Circuit Protection 25 Sep 2012

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X2SON (DPW) 4 View options

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