封裝資訊
| 封裝 | 引腳 HTSSOP (PWP) | 16 |
| 作業溫度範圍 (°C) -40 to 125 |
| 包裝數量 | 運送包裝 250 | SMALL T&R |
DRV8876 的特色
- N-channel H-bridge motor
driver
- Drives one bidirectional brushed DC motor
- Two unidirectional brushed DC motors
- Other resistive and inductive loads
- 4.5-V to 37-V operating supply voltage range
- Pin to pin
RDS(on) variants
- DRV8874: 200-mΩ (High-Side + Low-Side)
- DRV8876: 700-mΩ (High-Side + Low-Side)
- High output current capability
- DRV8874: 6-A Peak
- DRV8876: 3.5-A Peak
- Integrated current sensing and regulation
- Proportional current output (IPROPI)
- Selectable current regulation (IMODE)
- Cycle-by-cycle or fixed off time
- Selectable input control modes
(PMODE)
- PH/EN and PWM H-bridge control modes
- Independent half-bridge control mode
- Supports 1.8-V, 3.3-V, and 5-V logic inputs
- Ultra low-power sleep mode
- <1-µA @ VVM = 24-V, TJ = 25°C
- Spread spectrum clocking for low electromagnetic interference (EMI)
- Integrated protection features
- Undervoltage lockout (UVLO)
- Charge pump undervoltage (CPUV)
- Overcurrent protection (OCP)
- Automatic retry or outputs latched off (IMODE)
- Thermal shutdown (TSD)
- Automatic fault recovery
- Fault indicator pin (nFAULT)
DRV8876 的說明
The DRV887x family of devices are flexible motor drivers for a wide variety of applications. The devices integrate an N-channel H-bridge, charge pump regulator, current sensing and regulation, current proportional output, and protection circuitry. The charge pump improves efficiency by allowing for both high-side and low-side N-channels MOSFETs and 100% duty cycle support. The family of devices come in pin-to-pin, scalable RDS(on) options to support different loads with minimal design changes.
Integrated current sensing allows for the driver to regulate the motor current during start up and high load events. A current limit can be set with an adjustable external voltage reference. Additionally, the devices provide an output current proportional to the motor load current. This can be used to detect motor stall or change in load conditions. The integrated current sensing uses an internal current mirror architecture, removing the need for a large power shunt resistor, saving board area and reducing system cost.
A low-power sleep mode is provided to achieve ultra-low quiescent current draw by shutting down most of the internal circuitry. Internal protection features are provided for supply undervoltage lockout (UVLO), charge pump undervoltage (CPUV), output overcurrent (OCP), and device overtemperature (TSD). Fault conditions are indicated on nFAULT.