LMG3522R030
- 650-V GaN-on-Si FET with integrated gate driver
- Integrated high precision gate bias voltage
- 200-V/ns FET hold-off
- 2-MHz switching frequency
- 20-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
- Operates from 7.5-V to 18-V supply
- Robust protection
- Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
- Withstands 720-V surge while hard-switching
- Self-protection from internal overtemperature and UVLO monitoring
- Advanced power management
- Digital temperature PWM output
- Top-side cooled 12-mm × 12-mm VQFN package separates electrical and thermal paths for lowest power loop inductance
The LMG3522R030 GaN FET with integrated driver and protections is targeting switch-mode power converters and enables designers to achieve new levels of power density and efficiency.
The LMG3522R030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with TIs low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Adjustable gate drive strength allows control of the slew rate from 20 V/ns to 150 V/ns, which can be used to actively control EMI and optimize switching performance.
Advanced power management features include digital temperature reporting and fault detection. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which simplifies managing device loading. Faults reported include overtemperature, overcurrent, and UVLO monitoring.
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技術文件
類型 | 標題 | 日期 | ||
---|---|---|---|---|
* | Data sheet | LMG3522R030 650-V 30-mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting datasheet | PDF | HTML | 2022年 4月 25日 |
Application note | Implementation of Single-Phase Off-Grid Inverter With Digital Control Using PLECS Simulation | PDF | HTML | 2024年 4月 15日 | |
Technical article | 高轉換速率的負載暫態測試 | PDF | HTML | 2024年 3月 20日 | |
Analog Design Journal | 以高密度、GaN 最佳化 PFC 轉換器解決 AC 壓降復原問題 | PDF | HTML | 2024年 3月 18日 | |
Technical article | The benefits of GaN for battery test systems | PDF | HTML | 2022年 10月 7日 |
設計與開發
如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。
LMG3522EVM-042 — 配備整合式驅動器子卡的 LMG3522R030-Q1 車用 650-V 30-mΩ GaN FET
LMG3522EVM-042 可配置半橋中兩個 LMG3522R030 GaN FET,並具備逐週期過電流防護、鎖存短路防護功能和所有必要輔助周邊電路。此 EVM 設計旨在與較大的系統配合使用。
LMG3422R0x0 LMG3425R0x0 LMG3522R030 and LMG3522R030-Q1 PLECS Simulation Model
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封裝 | 引腳 | 下載 |
---|---|---|
VQFN (RQS) | 52 | 檢視選項 |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 資格摘要
- 進行中可靠性監測
- 晶圓廠位置
- 組裝地點