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TPS7H6005-SEP

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耐輻射 200V 半橋 GaN 閘極驅動器

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產品規格表

TPS7H6005-SEP

現行
產品規格表 立即訂購

產品詳細資料

Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
Bootstrap supply voltage (max) (V) 200 Power switch GaNFET Input supply voltage (min) (V) 10 Input supply voltage (max) (V) 16 Peak output current (A) 1.3 Operating temperature range (°C) -55 to 125 Undervoltage lockout (typ) (V) 8 Rating Space Propagation delay time (µs) 0.035 Rise time (ns) 0.4 Fall time (ns) 4 Iq (mA) 0.5 Input threshold TTL Channel input logic TTL/PWM Features Dead time control, Interlock, Internal LDO Driver configuration Half bridge
HTSSOP (DCA) 56 113.4 mm² 14 x 8.1
  • Radiation performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)
  • Radiation performance:
    • Radiation-hardness-assurance (RHA) up to total ionizing dose (TID) of 100krad(Si)
    • Single-event transient (SET), single-event burnout (SEB), and single-event gate rupture (SEGR) immune to linear energy transfer (LET) = 75MeV-cm2/mg
    • Single-event transient (SET) and single-event functional interrupt (SEFI) characterized up to LET = 75MeV-cm2/mg
  • 1.3A peak source, 2.5A peak sink current
  • Two operational modes:
    • Single PWM input with adjustable dead time
    • Two independent inputs
  • Selectable input interlock protection in independent input mode
  • Split outputs for adjustable turn-on and turn-off times
  • 30ns typical propagation delay in independent input mode
  • 5.5ns typical delay matching
  • Plastic packages outgas tested per ASTM E595
  • Available in military temperature range (–55°C to 125°C)

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package, and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.

The TPS7H60x5 series of radiation-hardness-assured (RHA) gallium nitride (GaN) field effect transistor (FET) gate drivers is designed for high frequency, high efficiency, and high current applications. The series consists of the TPS7H6005 (200V rating), TPS7H6015 (60V rating), and the TPS7H6025 (22V rating). Each of these devices has a 56-pin HTSSOP plastic package, and availability in both the QMLP and Space Enhanced Plastic (SEP) grades. The drivers feature adjustable dead time capability, small 30ns propagation delay and 5.5ns high-side and low-side matching. These parts also include internal high-side and low-side LDOs which ensure a drive voltage of 5V regardless of supply voltage. The TPS7H60x5 drivers all have split-gate outputs, providing flexibility to adjust the turn-on and turn-off strength of the outputs independently.

The TPS7H60x5 drivers feature two control input modes: independent input mode (IIM) and PWM mode. In IIM each of the outputs is controlled by a dedicated input. In PWM mode, two complementary outputs signals are generated from a single input and the user can adjust the dead time for each edge.

The gate drivers also offer user configurable input interlock in independent input mode as anti-shoot through protection. Input interlock disallows turn-on of both outputs when both inputs are on simultaneously. The user has the option to enable or disable this protection in independent input mode, which allows the driver to be used in a number of different converter configurations. The drivers can also be utilized for both half-bridge and dual-low side converter applications.
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類型 標題 日期
* Data sheet TPS7H60x5-SP and TPS7H60x5-SEP Radiation-Hardness-Assured Half Bridge GaN FET Gate Drivers datasheet (Rev. B) PDF | HTML 2025年 2月 27日
* Radiation & reliability report TPS7H6005-SEP Production Flow and Reliability Report (Rev. A) PDF | HTML 2025年 2月 24日
* Radiation & reliability report TPS7H6005-SEP Neutron Displacement Damage (NDD) Characterization Report PDF | HTML 2024年 12月 10日
* Radiation & reliability report TPS7H6005-SEP Total Ionizing Dose (TID) Report PDF | HTML 2024年 12月 10日
* Radiation & reliability report TPS7H60X5-SEP Single-Event Effects (SEE) Report PDF | HTML 2024年 11月 14日
Selection guide TI Space Products (Rev. J) 2024年 2月 12日
Application note Reduce the Risk in Low-Earth Orbit Missions with Space Enhanced Plastic Products (Rev. A) PDF | HTML 2022年 9月 15日
E-book Radiation Handbook for Electronics (Rev. A) 2019年 5月 21日

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開發板

TPS7H6005EVM — TPS7H6005-SEP 評估模組

TPS7H6005 評估模組展示了 TPS7H6005-SEP 柵極驅動器的運作情形。預設情況下，評估模組設定為以 TPS7H60XX-SP 的 PWM 模式運作，該模式接受一個切換訊號的輸入，並在內部產生互補訊號。這可變更為裝置的 IIM 模式，在此模式中，兩個輸出彼此獨立運作。

使用指南: PDF | HTML
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模擬型號

TPS7H60x3/TPS7H60x5 SIMPLIS Model

SNOM811.ZIP (22 KB) - SIMPLIS Model
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模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI 是有助於評估類比電路功能的設計和模擬環境。這款全功能設計和模擬套件使用 Cadence® 的類比分析引擎。PSpice for TI 包括業界最大的模型庫之一，涵蓋我們的類比和電源產品組合，以及特定類比行為模型，且使用無需支付費用。

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參考設計

PMP23391 — 300W, 12V output ZVS full-bridge converter reference design for 100kRad applications

This reference design is a full-bridge topology that is comprised of a TPS7H5005-SEP referenced on secondary ground that controls three TPS7H6005-SEP half-bridge gate drivers. The two drivers referenced to the primary side operate in pulse width modulation (PWM) mode which allows for the design to (...)
Test report: PDF
參考設計

PMP23552 — 適用於航太任務範圍的 50VIN 至 150VIN、28V 12A 同步降壓轉換器參考設計

此參考設計為 28V 輸出、12A 同步降壓轉換器，適合供 50V 至 150V 輸入範圍內運作的航太任務。主要應用包括降壓太陽能板和 120VDC 配電匯流排。TPS7H5006-SEP 脈衝寬度調變 (PWM) 控制器使用電壓模式控制來控制功率級。OPA4H199-SEP 會感測感測電阻器電壓，以啟用輸出短路保護。TPS7H6005-SEP 的可調式失效時間可將切換 MOSFET 的時序最佳化，只要 100V 輸入就可獲得超過 95% 的效率，在 50V 輸入條件下則可達到超過 96% 的效率。隨附 12V 自偏壓電路，可直接從輸出端供電給控制電路。若提供外部 12V (...)
Test report: PDF
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