UCC5880-Q1

現行

具備進階防護功能的車用 20A 隔離式即時可變 IGBT/SiC MOSFET 閘極驅動器

產品詳細資料

Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
Number of channels 1 Isolation rating Reinforced Withstand isolation voltage (VISO) (Vrms) 5000 Working isolation voltage (VIOWM) (Vrms) 1414 Transient isolation voltage (VIOTM) (VPK) 7071 Power switch IGBT, SiCFET Peak output current (A) 20 Features Active miller clamp, Disable, Enable, Fault reporting, High CMTI, Power good, Programmable dead time, Real-time variable gate drive strength, Short circuit protection, Soft turn-off, Two-level turn-off Output VCC/VDD (max) (V) 30 Output VCC/VDD (min) (V) 12 Input supply voltage (min) (V) 3 Input supply voltage (max) (V) 5.5 TI functional safety category Functional Safety-Compliant Propagation delay time (µs) 0.15 Input threshold CMOS Operating temperature range (°C) -40 to 125 Rating Automotive Bootstrap supply voltage (max) (V) 1414 Rise time (ns) 55 Fall time (ns) 55 Undervoltage lockout (typ) (V) Programmable
SSOP (DFC) 32 106.09 mm² 10.3 x 10.3
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b
  • Dual-output driver with real time variable drive strength
    • ±15A and ±5A drive current outputs
    • Digital input pins (GD*) for drive strength adjustment without SPI
    • 3 resistor settings R1, R2, or R1||R2
    • Integrated 4A active Miller clamp or optional external drive for Miller clamp transistor
  • Primary-side and secondary-side active short circuit (ASC) support
  • Under-voltage and over-voltage protection on internal and external supplies
  • Driver die temperature sensing and over temperature protection
  • Short-circuit protection:
    • 110ns response time to DESAT event
    • DESAT protection – selections up to 14V
    • Shunt resistor based short-circuit (SC) and over-current (OC) protection
    • Configurable protection threshold values and blanking times
    • Programmable soft turn-off (STO) and two-level soft turn-off (2STO) current
  • Integrated 10-bit ADC
    • Able to measure power switch temperature, DC Link voltage, driver die temperature, DESAT pin voltage, VCC2 voltage
    • Programmable digital comparators
  • Advanced VCE/VDS clamping circuit
  • Functional Safety-Compliant
  • Integrated diagnostics:
    • Built in self-test (BIST) for protection comparators
    • Gate threshold voltage measurement for power device health monitoring
    • INP to transistor gate path integrity
    • Internal clock monitoring
    • Fault alarm and warning outputs (nFLT*)
    • ISO communication data integrity check
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • 150V/ns CMTI
  • AEC-Q100 qualified with the following results:
    • Device temperature grade 1: -40°C to +125°C ambient operating temperature
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C2b

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

The UCC5880-Q1 device is an isolated, highly configurable adjustable drive strength gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections are included, such as shunt resistor based over-current, over-temperature (PTC, NTC, or diode), and DESAT detection, with selectable soft turn-off or two-level soft turn-off during these faults. An integrated 10-bit ADC enables monitoring of up to 2 analog inputs, VCC2, DESAT, and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL compliant systems. The parameters and thresholds for these features are configurable using the SPI, which allows the device to be used with nearly any SiC MOSFET or IGBT.

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技術文件

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類型 標題 日期
* Data sheet UCC5880-Q1 Isolated 20A Adjustable Gate Drive IGBT/SiC MOSFET Gate Driver With Advanced Protection Features For Automotive Applications datasheet (Rev. A) PDF | HTML 2024年 2月 26日
Technical article 開發新一代電氣化推進系統 PDF | HTML 2024年 5月 20日
Technical article Three key components needed to boost performance of next generation EV traction inverters PDF | HTML 2024年 1月 5日
Technical article How to maximize SiC traction inverter efficiency with real-time variable gate drive strength PDF | HTML 2024年 1月 4日
Certificate UCC5880INVERTEREVM EU RoHS Declaration of Conformity (DoC) 2023年 3月 13日
Technical article Improving safety in EV traction inverter systems PDF | HTML 2022年 12月 8日
Certificate UCC5880QEVM-057 EU RoHS Declaration of Conformity (DoC) 2022年 11月 11日
White paper 具備最佳性能的 EV 牽引逆變器設計優先順序 PDF | HTML 2022年 9月 27日
White paper 牽引逆變器 – 車輛電氣化背後的驅動力量 PDF | HTML 2022年 8月 17日
Technical article Reducing power loss and thermal dissipation in SiC traction inverters PDF | HTML 2022年 6月 10日

設計與開發

如需其他條款或必要資源,請按一下下方的任何標題以檢視詳細頁面 (如有)。

開發板

UCC5880INVERTEREVM — UCC5880-Q1 evaluation module for variable isolated gate drive in traction inverters

UCC5880INVERTEREVM 電路板可獨立用於測試板上焊接 100-nF 電容器負載的 UCC5880-Q1 驅動器,也可用於直接驅動 Wolfspeed XM3 SiC式半橋電源模組,以進行高功率測試。電路板含有兩個 UCC14240-Q1 隔離式偏壓電源。EVM 具備配置不同 SPI 通訊方式的彈性,其中包括一般 SPI、菊輪鍊及 TI 位址架構。EVM 可與用於 3 相變流器測試 (高達 300 kW) 的 Sitara™ 和 C2000™ 即時微控制器控制卡介接

開發板

UCC5880QEVM-057 — UCC5880-Q1 評估模組

UCC5880-Q1 評估模組專為評估具可調式閘極驅動強度和進階保護功能的 UCC5880-Q1 20a隔離式單通道閘極驅動器所設計。此閘極驅動器的目標在於 EV/HEV 應用中驅動高功率 SiC MOSFET 和 IGBT。UCC5880-Q1 驅動器階段級配備分離輸出雙驅動器,可為不同應用條件提供最高閘極驅動強度靈活性。包含主動米勒箝制、DESAT 或分流電流感測偵測、軟關閉或 2 階段軟關閉、VCE 過電壓保護、閘極驅動器電源的 UVLO 和 OVLO、溫度監控和過熱自動關機,以及閘極監控等保護功能,以支援要求高可靠性的系統。此驅動器也透過序列周邊介面 (SPI) (...)
模擬工具

PSPICE-FOR-TI — PSpice® for TI 設計與模擬工具

PSpice® for TI is a design and simulation environment that helps evaluate functionality of analog circuits. This full-featured, design and simulation suite uses an analog analysis engine from Cadence®. Available at no cost, PSpice for TI includes one of the largest model libraries in the (...)
參考設計

TIDM-02014 — 高功率、高性能車用 SiC 牽引變流器參考設計

TIDM-02014 是由德州儀器開發的 800-V、300kW SiC 式牽引變流器系統參考設計,在這設計中,Wolfspeed 為 OEM 和設計工程師提供良好根基,讓他們能夠打造高性能、高效率的牽引變流器系統,加快上市速度。本解決方案展現了 TI 和 Wolfspeed 的牽引變流器系統技術如何藉由高性能隔離式閘極驅動器,和驅動 Wolfspeed SiC 電源模組的即時可變閘極驅動器強度,藉以降低可用電壓過衝,進而達到提升系統效率之目的。與 TI 隔離式偏壓電源解決方案耦合的隔離式閘極驅動器可大幅降低 PCB 尺寸,將 PCB 面積縮小 2 倍以上,且高度低於 4mm,可省下 30 (...)
Design guide: PDF
參考設計

PMP31236 — Gate driver reference design for HybridPACK™ Drive IGBT modules

This reference uses six UCC5880-Q1 gate-drive ICs and six LM5180-Q1 isolated bias supplies to interface with and drive Infineon HybridPACK™ insulated-gate bipolar transistor (IGBT) modules. The isolated output voltage is +15 V and −8 V with 100-mA maximum output current each. The input voltage (...)
Test report: PDF
封裝 針腳 CAD 符號、佔位空間與 3D 模型
SSOP (DFC) 32 Ultra Librarian

訂購與品質

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  • RoHS
  • REACH
  • 產品標記
  • 鉛塗層/球物料
  • MSL 等級/回焊峰值
  • MTBF/FIT 估算值
  • 材料內容
  • 認證摘要
  • 進行中持續性的可靠性監測
內含資訊:
  • 晶圓廠位置
  • 組裝地點

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