UCG28826
- Integrated 750V GaN with 170mΩ Rds(on) option
- Dynamic QR/DCM/CCM modes of operation
- High power density: up to 500kHz switching frequency
- Enable low BoM cost by integration
- Remove auxiliary winding with self bias
- Integrated input and output voltage sensing
- Integrated current sense
- Integrated HV startup
- Integrated X-cap discharge
- High efficiency and low EMI performance
- Ultra-low standby power: <30mW
- Frequency foldback and burst mode
- Valley locking
- Frequency dithering
- Switching slew rate control
- Comprehensive protection features
- Overtemperature protection
- Overvoltage protection
- Short-circuit protection
- Cycle-by-cycle current limit
- Two-level over power protection with LPS
- Brownin and brownout protection
- Open feedback protection
- Flexible configurability via external resistors
- X-cap discharge and CCM mode disable
- Selectable switching slew rate
- Multiple clamping frequency settings
- Fault latch or auto-restart
- Maximum and minimum peak current ratio
- Dithering amplitude
UCG2882x is a high frequency, quasi-resonant flyback converter with built-in 750V GaN high electron mobility transistor (HEMT) with as low as 170mΩ Rds(on) for AC to DC power conversion. It is best suited for high power density applications such as cell phone fast chargers and notebook adapters. The key feature of this device is the self-bias and auxless sensing scheme which eliminates the need of the auxiliary winding and simplifies the system design with higher efficiency.
This device also features intelligent mode transition (CCM/QR/DCM) to enable high efficiency across wide power range and <30mW standby power consumption. In addition, UCG2882x includes a full list of protections such as brown-in/out protection, SCP, OVP, OPP, LPS, OFB and OTP. The cycle-by-cycle current limit ensures fast response to the fault conditions to safeguard the system and improve the reliability. In a small 5×5mm package, the UCG2882x has dedicated configuration pins to offer more flexibility. Only resistors are needed to tune certain parameters for each system, enabling a platform design with a single device.
技術文件
| 類型 | 標題 | 日期 | ||
|---|---|---|---|---|
| * | Data sheet | UCG2882x Self-Biased High Frequency QR Flyback Converter With Integrated GaN datasheet (Rev. A) | PDF | HTML | 2025年 5月 8日 |
| EVM User's guide | Using the UCG28826EVM-093 65W USB-C PD High-Density GaN Integrated Quasi-Resonant Flyback Converter (Rev. B) | PDF | HTML | 2025年 5月 14日 | |
| Application note | How to Size the VCC Cap for a VCC Self-Biasing Based GaN Flyback Converter | PDF | HTML | 2025年 4月 1日 | |
| Technical article | 無輔助 GaN 返馳式轉換器如何解決 AC/DC 變壓器設計挑戰 (Rev. A) | PDF | HTML | 2025年 2月 13日 |
設計與開發
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UCG28826EVM-093 — UCG28826 評估模組
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| 封裝 | 針腳 | CAD 符號、佔位空間與 3D 模型 |
|---|---|---|
| VQFN (REZ) | 12 | Ultra Librarian |
訂購與品質
- RoHS
- REACH
- 產品標記
- 鉛塗層/球物料
- MSL 等級/回焊峰值
- MTBF/FIT 估算值
- 材料內容
- 認證摘要
- 進行中持續性的可靠性監測
- 晶圓廠位置
- 組裝地點