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DRV8353RSRGZR ACTIVE

102-V max 3-phase smart gate driver with buck regulator & current shunt amplifiers

NEW - Custom reel may be available
Inventory: 3,970  
 

Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material NIPDAUAG
MSL rating / Peak reflow Level-2-260C-1 YEAR
Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
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Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (℃)
VQFN (RGZ) | 48 2,500 | LARGE T&R
Custom reel may be available
-40 to 125
Package | Pins VQFN (RGZ) | 48
Package qty | Carrier: 2,500 | LARGE T&R
Custom reel may be available
Operating temperature range (℃) -40 to 125
View TI packaging information

Features for the DRV8353R

  • 9 to 100-V, Triple half-bridge gate driver
    • Optional integrated buck regulator
    • Optional triple low-side current shuntamplifiers
  • Smart gate drive architecture
    • Adjustable slew rate control for EMIperformance
    • VGS handshake and minimum dead-timeinsertion to prevent shoot-through
    • 50-mA to 1-A peak source current
    • 100-mA to 2-A peak sink current
    • dV/dt mitigation throughstrong pulldown
  • Integrated gate driver power supplies
    • High-side doubler charge pump For 100% PWM duty cyclecontrol
    • Low-side linearregulator
  • Integrated LM5008A buck regulator
    • 6 to 95-V operating voltage range
    • 2.5 to 75-V,350-mA output capability
  • Integrated triple current shunt amplifiers
    • Adjustable gain (5, 10, 20, 40V/V)
    • Bidirectional or unidirectionalsupport
  • 6x, 3x, 1x, and independent PWM modes
    • Supports 120° sensored operation
  • SPI or hardware interface available
  • Low-power sleep mode (20 µA at VVM = 48-V)
  • Integrated protection features
    • VM undervoltagelockout (UVLO)
    • Gate drive supply undervoltage (GDUV)
    • MOSFETVDS overcurrent protection (OCP)
    • MOSFET shoot-through prevention
    • Gate driver fault(GDF)
    • Thermal warning and shutdown (OTW/OTSD)
    • Faultcondition indicator (nFAULT)

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Description for the DRV8353R

The DRV835x family of devices are highly-integrated gate drivers for three-phasebrushless DC (BLDC) motor applications. These applications include field-oriented control (FOC),sinusoidal current control, and trapezoidal current control of BLDC motors. The device variantsprovide optional integrated current shunt amplifiers to support different motor control schemes anda buck regulator to power the gate driver or external controller.

The DRV835x uses smart gate drive (SGD) architecture to decrease the number of externalcomponents that are typically necessary for MOSFET slew rate control and protection circuits. TheSGD architecture also optimizes dead time to prevent shoot-through conditions, provides flexibilityin decreasing electromagnetic interference (EMI) by MOSFET slew rate control, and protects againstgate short circuit conditions through VGS monitors. A strong gate pulldowncircuit helps prevent unwanted dV/dt parasitic gate turn on events

Various PWM control modes (6x, 3x, 1x, and independent) are supported for simpleinterfacing to the external controller. These modes can decrease the number of outputs required ofthe controller for the motor driver PWM control signals. This family of devices also includes 1xPWM mode for simple sensored trapezoidal control of a BLDC motor by using an internal blockcommutation table.

Pricing


Qty Price (USD)
1-99 4.812
100-249 4.216
250-999 2.956
1,000+ 2.382

Additional package qty | carrier options

Package qty | Carrier 250 | SMALL T&R
Inventory 301
Qty | Price (USD) 1ku | 2.606 1-99 5.264 100-249 4.613 250-999 3.234 1,000+ 2.606