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LM5104M/NOPB

High Voltage Half-Bridge Gate Driver with Adaptive Delay

Availability: 10,921

Packaging

Package | PIN: SOIC (D) | 8
Temp: Q (-40 to 125)
Carrier: Partial Tube
Qty Price
1-9 $2.80
10-24 $2.52
25-99 $2.35
100-249 $2.06
250-499 $1.93
500-749 $1.64
750-999 $1.38
1000+ $1.32

Features

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package

Texas Instruments  LM5104M/NOPB

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.