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LM5104SD/NOPB ACTIVE

2-A, 100-V half bridge gate driver with 8-V UVLO and adaptive delay

NEW - Custom reel may be available
Inventory: 397,922  
 

Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material SN
MSL rating / Peak reflow Level-1-260C-UNLIM
Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
View or download

Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (℃)
WSON (DPR) | 10 1,000 | LARGE T&R
Custom reel may be available
-40 to 125
Package | Pins WSON (DPR) | 10
Package qty | Carrier: 1,000 | LARGE T&R
Custom reel may be available
Operating temperature range (℃) -40 to 125
View TI packaging information

Features for the LM5104

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • Adaptive Rising and Falling Edges With Programmable
    Additional Delay
  • Single Input Control
  • Bootstrap Supply Voltage Range up to 118-V DC
  • Fast Turnoff Propagation Delay (25 ns Typical)
  • Drives 1000-pF Loads With 15-ns Rise and Fall Times
  • Supply Rail Undervoltage Lockout
  • SOIC and WSON-10 4-mm × 4-mm Package

Description for the LM5104

The LM5104 High-Voltage Gate Driver is designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck configuration. The floating high-side driver can work with supply voltages up to 100 V. The high-side and low-side gate drivers are controlled from a single input. Each change in state is controlled in an adaptive manner to prevent shoot-through issues. In addition to the adaptive transition timing, an additional delay time can be added, proportional to an external setting resistor. An integrated high-voltage diode is provided to charge high-side gate drive bootstrap capacitor. A robust level shifter operates at high speed while consuming low power and providing clean level transitions from the control logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. This device is available in the standard SOIC and the WSON packages.

Pricing


Qty Price (USD)
1-99 1.955
100-249 1.713
250-999 1.201
1,000+ 0.968

Additional package qty | carrier options

Package qty | Carrier 4,500 | LARGE T&R
Inventory 4,500
Qty | Price (USD) 1ku | 0.968 1-99 1.955 100-249 1.713 250-999 1.201 1,000+ 0.968
Custom reel may be available