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LM5110-1MX/NOPB ACTIVE

5-A/3-A dual channel gate driver with 4-V UVLO, dedicated input ground, and shutdown input

NEW - Custom reel may be available
Inventory: 40,993  
 

Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material SN
MSL rating / Peak reflow Level-1-260C-UNLIM
Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
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Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (°C)
SOIC (D) | 8 2,500 | LARGE T&R
Custom reel may be available
-40 to 125
Package | Pins SOIC (D) | 8
Package qty | Carrier: 2,500 | LARGE T&R
Custom reel may be available
Operating temperature range (°C) -40 to 125
View TI packaging information

Features for the LM5110

  • Independently Drives Two N-Channel MOSFETs
  • Compound CMOS and Bipolar Outputs Reduce Output Current Variation
  • 5A sink/3A Source Current Capability
  • Two Channels can be Connected in Parallel to Double the Drive Current
  • Independent Inputs (TTL Compatible)
  • Fast Propagation Times (25-ns Typical)
  • Fast Rise and Fall Times (14-ns/12-ns Rise/Fall With 2-nF Load)
  • Dedicated Input Ground Pin (IN_REF) for Split Supply or Single Supply Operation
  • Outputs Swing from VCC to VEE Which Can Be Negative Relative to Input Ground
  • Available in Dual Noninverting, Dual Inverting and Combination Configurations
  • Shutdown Input Provides Low Power Mode
  • Supply Rail Undervoltage Lockout Protection
  • Pin-Out Compatible With Industry Standard Gate Drivers
  • Packages:
    • SOIC-8
    • WSON-10 (4 mm × 4 mm)

Description for the LM5110

The LM5110 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each "compound" output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 5A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Separate input and output ground pins provide Negative Drive Capability allowing the user to drive MOSFET gates with positive and negative VGS voltages. The gate driver control inputs are referenced to a dedicated input ground (IN_REF). The gate driver outputs swing from VCC to the output ground VEE which can be negative with respect to IN_REF. Undervoltage lockout protection and a shutdown input pin are also provided. The drivers can be operated in parallel with inputs and outputs connected to double the drive current capability. This device is available in the SOIC-8 and the thermally-enhanced WSON-10 packages.

Pricing


Qty Price (USD)
1-99 1.142
100-249 0.944
250-999 0.678
1,000+ 0.51

Additional package qty | carrier options

Package qty | Carrier 95 | TUBE
Inventory 15,764
Qty | Price (USD) 1ku | 0.612 1-99 1.371 100-249 1.132 250-999 0.813 1,000+ 0.612