Packaging information
| Package | Pins HTQFP (PHP) | 48 |
| Operating temperature range (°C) -40 to 150 |
| Package qty | Carrier 250 | SMALL T&R |
Features for the LM5170-Q1
- AEC-Q100 qualified for automotive applications:
- Device temperature grade 1: –40°C to +125°C ambient operating range
- Device HBM ESD classification level 2
- Device CDM ESD classification level C4B
- Functional Safety-Capable
- 100-V HV-port and 65-V LV-port max ratings
- 1% Accurate bidirectional current regulation
- 1% Accurate channel current monitoring
- 5-A Peak half-bridge gate drivers
- Programmable or adaptive dead-time control
- Programmable oscillator frequency with optional synchronization to external clock
- Independent channel enable control inputs
- Analog and digital channel current control inputs
- Programmable cycle-by-cycle peak current limit
- HV and LV port overvoltage protection
- Diode emulation prevents negative current
- Programmable soft-start timer
- MOSFET failure detect at start-up and circuit breaker control
- Multiphase operation phase adding or dropping
Description for the LM5170-Q1
The LM5170-Q1 controller provides the essential high voltage and precision elements of a dual-channel bidirectional converter for automotive 48-V and 12-V dual battery systems. It regulates the average current flowing between the high voltage and low voltage ports in the direction designated by the DIR input signal. The current regulation level is programmed through analog or digital PWM inputs.
Dual-channel differential current sense amplifiers and dedicated channel current monitors achieve typical current accuracy of 1%. Robust 5-A half-bridge gate drivers are capable of driving parallel MOSFET switches delivering 500 W or more per channel. The diode emulation mode of the synchronous rectifiers prevents negative currents but also enables discontinuous mode operation for improved efficiency with light loads. Versatile protection features include cycle-by-cycle current limiting, overvoltage protection at both HV and LV ports, MOSFET failure detection and overtemperature protection.