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LMG1210RVRT ACTIVE

1.5-A, 3-A, 200-V half bridge gate driver, 5-V UVLO and programmable dead-time for GaNFET and MOSFET

Inventory: 2,202
 

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Packaging information

Package | Pins WQFN (RVR) | 19
Operating temperature range (℃) Q (-40 to 125)
Package qty | Carrier: 250 | SMALL T&R
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Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material SN
MSL rating / Peak reflow Level-2-260C-1 YEAR
Material content View
DPPM / MTBF / Fit rate View
Qualification summary View
Ongoing reliability monitoring View
Device marking View

Features

  • Up to 50-MHz operation
  • 10-ns typical propagation delay
  • 3.4-ns high-side to low-side matching
  • Minimum pulse width of 4 ns
  • Two control input options
    • Single PWM input with adjustable dead time
    • Independent inputmode
  • 1.5-A peak source and 3-A peak sink currents
  • External bootstrap diode for flexibility
  • Internal LDO for adaptability to voltage rails
  • High 300-V/ns CMTI
  • HO to LO capacitance less than 1 pF
  • UVLO and overtemperature protection
  • Low-inductance WQFN package

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Description

The LMG1210is a 200-V, half-bridge MOSFET and Gallium Nitride Field Effect Transistor (GaN FET) driverdesigned for ultra-high frequency, high-efficiency applications that features adjustable deadtimecapability, very small propagation delay, and 3.4-ns high-side low-side matching to optimize systemefficiency. This part also features an internal LDO which ensures a gate-drive voltage of 5-Vregardless of supply voltage.

To enable best performance in a variety of applications, the LMG1210 allows the designerto choose the optimal bootstrap diode to charge the high-side bootstrap capacitor. An internalswitch turns the bootstrap diode off when the low side is off, effectively preventing the high-sidebootstrap from overcharging and minimizing the reverse recovery charge. Additional parasiticcapacitance across the GaN FET is minimized to less than 1 pF to reduce additional switchinglosses.

The LMG1210 features two control input modes: Independent Input Mode (IIM) and PWM mode.In IIM each of the outputs is independently controlled by a dedicated input. In PWM mode the twocomplementary output signals are generated from a single input and the user can adjust the deadtime from 0 to 20 ns for each edge. The LMG1210 operates over a wide temperature range from –40°Cto 125°C and is offered in a low-inductance WQFN package.

Qty Price
1-99 $4.08
100-249 $3.33
250-999 $2.61
1,000+ $2.22