The LMG341xR070 GaN power stage with integrated driver and protection enables designersto achieve new levels of power density and efficiency in power electronics systems. The LMG341x’sinherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zeroreverse recovery to reduce switching losses by as much as 80%, and low switch node ringing toreduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.
The LMG341xR070 provides a smart alternative to traditional cascode GaN and standaloneGaN FETs by integrating a unique set of features to simplify design, maximize reliability andoptimize the performance of any power supply. Integrated gate drive enables 100V/ns switching withnear zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-throughevents, Overtemperature shutdown prevents thermal runaway, and system interface signals provideself-monitoring capability.