LMG3411EVM-029 LMG3411R070 600-V 70-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card angled board image

LMG3411EVM-029

LMG3411R070 600-V 70-mΩ GaN with cycle-by-cycle overcurrent protection half-bridge daughter card

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Features for the LMG3411EVM-029

  • Input voltage operates up to 600V
  • Simple open loop design to evaluate performance of LMG3411R070
  • Single PWM input on board for PWM signal with 50 ns dead time
  • Cycle by cycle over current protection function
  • Convenient probe points for logic and power stage measurements with oscilloscope probes that have short ground spring probes

Description for the LMG3411EVM-029

LMG3411EVM-029 configures two LMG3411R070 GaN FETs in a half bridge with the cycle by cycle over current protection function and all the necessary auxiliary peripheral circuitry.This EVM is designed to work in conjunction with larger systems.

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