text.skipToContent text.skipToNavigation

LMG3411R070RWHT ACTIVE

600-V 70-mΩ GaN with integrated driver and cycle-by-cycle overcurrent protection

Inventory: 2,322
 
Custom reel may be available

Download data sheet for LMG3411R070
  |   View additional information for LMG3411R070

Packaging information

Package | Pins VQFN (RWH) | 32
Operating temperature range (℃) Q (-40 to 125)
Package qty | Carrier: 250 | SMALL T&R
View more packaging information

Quality information

RoHS Yes
REACH Yes
Lead finish / Ball material NIPDAU
MSL rating / Peak reflow Level-3-260C-168 HR
Material content View
DPPM / MTBF / Fit rate -
Qualification summary View
Ongoing reliability monitoring View
Device marking View

Features

  • TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
  • Enables High Density Power Conversion Designs
    • Superior System Performance Over Cascode or Stand-alone GaN FETs
    • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
    • Adjustable Drive Strength for Switching Performance and EMIControl
    • Digital Fault Status OutputSignal
    • Only +12 V Unregulated SupplyNeeded
  • Integrated Gate Driver
    • Zero Common Source Inductance
    • 20 ns Propagation Delay for MHz Operation
    • Process-tuned Gate Bias Voltage for Reliability
    • 25 to 100V/ns User Adjustable SlewRate
  • Robust Protection
    • Requires No External Protection Components
    • Over-current Protection with <100ns Response
    • >150V/nsSlew Rate Immunity
    • Transient OvervoltageImmunity
    • Overtemperature Protection
    • UVLO Protection on All SupplyRails
  • Device Options:
    • LMG3410R070: LatchedOvercurrent Protection
    • LMG3411R070:Cycle-by-cycle Overcurrent Protection

All trademarks are the property of their respective owners.

Description

The LMG341xR070 GaN power stage with integrated driver and protection enables designersto achieve new levels of power density and efficiency in power electronics systems. The LMG341x’sinherent advantages over silicon MOSFETs include ultra-low input and output capacitance, zeroreverse recovery to reduce switching losses by as much as 80%, and low switch node ringing toreduce EMI. These advantages enable dense and efficient topologies like the totem-pole PFC.

The LMG341xR070 provides a smart alternative to traditional cascode GaN and standaloneGaN FETs by integrating a unique set of features to simplify design, maximize reliability andoptimize the performance of any power supply. Integrated gate drive enables 100V/ns switching withnear zero Vds ringing, <100 ns current limiting self-protects against unintended shoot-throughevents, Overtemperature shutdown prevents thermal runaway, and system interface signals provideself-monitoring capability.

Qty Price
1-99 $15.64
100-249 $13.66
250-999 $10.53
1,000+ $9.42