Packaging information
| Package | Pins UQFN (RMS) | 14 |
| Operating temperature range (°C) -40 to 85 |
| Package qty | Carrier 250 | SMALL T&R |
Features for the LMH5401
- Gain Bandwidth Product (GBP): 8 GHz
- Excellent Linearity Performance:
DC to 2 GHz, G = 12 dB - Slew Rate: 17,500 V/µs
- Low
HD2, HD3 Distortion
(1 VPP, 200 Ω, DE-DE, G = 12 dB):- 100 MHz: HD2 at –104 dBc, HD3 at –96 dBc
- 200 MHz: HD2 at –95 dBc, HD3 at –92 dBc
- 500 MHz: HD2 at –80 dBc, HD3 at –77 dBc
- 1 GHz: HD2 at –64 dBc, HD3 at –58 dBc
- Low IMD2, IMD3 Distortion
(2 VPP, 200 Ω, DE-DE, G = 12 dB):- 200 MHz: IMD2 at –96 dBc, IMD3 at –95 dBc
- 500 MHz: IMD2 at –80 dBc, IMD3 at –83 dBc
- 1 GHz: IMD2 at –70 dBc, IMD3 at –63 dBc
- Input Voltage Noise: 1.25 nV/√Hz
- Input Current Noise: 3.5 pA/√Hz
- Supports Single- and Dual-Supply Operation
- Power Consumption: 55 mA
- Power-Down Feature
Description for the LMH5401
The LMH5401 device is a very high-performance, differential amplifier optimized for radio frequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications. The device is ideal for dc- or ac-coupled applications that may require a single-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC). The LMH5401 generates very low levels of second- and third-order distortion when operating in SE-DE or differential-to-differential (DE-DE) mode.
The amplifier is optimized for use in both SE-DE and DE-DE systems. The device has unprecedented usable bandwidth from DC to 2 GHz. The LMH5401 can be used for SE-DE conversions in the signal chain without external baluns in a wide range of applications such as test and measurement, broadband communications, and high-speed data acquisition.
A common-mode reference input pin aligns the amplifier output common-mode with the ADC input requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operation is supported when required by the application. A power-down feature is also available for power savings.
This level of performance is achieved at a very low power level of 275 mW when a 5-V supply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOS process and is available in a space-saving, UQFN-14 package for higher performance.