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PDRV8106HRHBQ1 ACTIVE

37V, automotive half-bridge smart gate driver with inline current sense amplifier

Inventory: 290
 

Quality information

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Packaging information

Package | Pins Package qty | Carrier Operating temperature range (°C)
VQFN (RHB) | 32 1 | TUBE
-40 to 125
Package | Pins VQFN (RHB) | 32
Package qty | Carrier 1 | TUBE
Operating temperature range (°C) -40 to 125
View TI packaging information

Features for the DRV8106-Q1

  • AEC-Q100 qualified for automotive applications:
    • Temperature grade 1: –40°C to +125°C, TA
  • Half-bridge smart gate driver
    • 4.9-V to 37-V (40-V abs. max) operating range
    • Doublercharge pump for 100% PWM
  • Smart gate drive architecture
    • Adjustable slew rate control
    • 0.5-mA to 62-mA peak sourcecurrent output
    • 0.5-mA to 62-mA peak sink currentoutput
    • Integrated dead-time handshaking
    • MOSFET drain tosource and gate monitors
  • Wide common mode current shunt amplifier
    • Supports inline, high-side, orlow-side
    • Adjustable gain settings (10, 20, 40, 80V/V)
    • Integrated feedback resistors
    • Adjustable PWM blankingscheme
  • Multiple interface options available
    • SPI: Detailed configuration and diagnostics
    • H/W: Simplifiedcontrol and less MCU pins
  • Spread spectrum clocking for EMI reduction
  • Compact VQFN package with wettable flanks
  • Integrated protection features
    • Dedicated driver disable pin (DRVOFF)
    • Supply and regulatorvoltage monitors
    • MOSFET VDS overcurrentmonitors
    • MOSFET VGS gate faultmonitors
    • Charge pump for reverse polarity MOSFET
    • Offlineopen load and short circuit diagnostics
    • Device thermal warning andshutdown
    • Fault condition interrupt pin (nFAULT)

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Description for the DRV8106-Q1

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side andlow-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrateddoubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improvereliability. The gate driver optimizes dead time to avoid shoot-through conditions, providescontrol to decreasing electromagnetic interference (EMI) through adjustable gate drive current, andprotects against drain to source and gate short conditions with VDS andVGS monitors.

A wide common mode shunt amplifierprovides inline current sensing to continuously measure motor current even during recirculatingwindows. The amplifier can be used in low-side or high-side sense configurations if inline sensingis not required.

The DRV8106-Q1 provide an array of protection features to ensurerobust system operation. These include under and overvoltage monitors for the power supply andcharge pump, VDS overcurrent and VGS gate faultmonitors for the external MOSFETs, offline open load and short circuit diagnostics, and internalthermal warning and shutdown protection.

Pricing


Qty Price (USD)
1-99 1.837
100-249 1.517
250-999 1.09
1,000+ 0.82