PDRV8106HRHBQ1 ACTIVE

Features for the DRV8106-Q1

• AEC-Q100 qualified for automotive applications:
  • Temperature grade 1: –40°C to +125°C, T_A
• Half-bridge smart gate driver
  • 4.9-V to 37-V (40-V abs. max) operating range
  • Doublercharge pump for 100% PWM
• Smart gate drive architecture
  • Adjustable slew rate control
  • 0.5-mA to 62-mA peak sourcecurrent output
  • 0.5-mA to 62-mA peak sink currentoutput
  • Integrated dead-time handshaking
  • MOSFET drain tosource and gate monitors
• Wide common mode current shunt amplifier
  • Supports inline, high-side, orlow-side
  • Adjustable gain settings (10, 20, 40, 80V/V)
  • Integrated feedback resistors
  • Adjustable PWM blankingscheme
• Multiple interface options available
  • SPI: Detailed configuration and diagnostics
  • H/W: Simplifiedcontrol and less MCU pins
• Spread spectrum clocking for EMI reduction
• Compact VQFN package with wettable flanks
• Integrated protection features
  • Dedicated driver disable pin (DRVOFF)
  • Supply and regulatorvoltage monitors
  • MOSFET V_DS overcurrentmonitors
  • MOSFET V_GS gate faultmonitors
  • Charge pump for reverse polarity MOSFET
  • Offlineopen load and short circuit diagnostics
  • Device thermal warning andshutdown
  • Fault condition interrupt pin (nFAULT)

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Description for the DRV8106-Q1

The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side andlow-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrateddoubler charge pump for the high-side and a linear regulator for the low-side.

The device uses a smart gate drive architecture to reduce system cost and improvereliability. The gate driver optimizes dead time to avoid shoot-through conditions, providescontrol to decreasing electromagnetic interference (EMI) through adjustable gate drive current, andprotects against drain to source and gate short conditions with V_DS andV_GS monitors.

A wide common mode shunt amplifierprovides inline current sensing to continuously measure motor current even during recirculatingwindows. The amplifier can be used in low-side or high-side sense configurations if inline sensingis not required.

The DRV8106-Q1 provide an array of protection features to ensurerobust system operation. These include under and overvoltage monitors for the power supply andcharge pump, V_DS overcurrent and V_GS gate faultmonitors for the external MOSFETs, offline open load and short circuit diagnostics, and internalthermal warning and shutdown protection.