The DRV8106-Q1 is a highly integrated half-bridge gate driver, capable of driving high-side andlow-side N-channel power MOSFETs. It generates the proper gate drive voltages using an integrateddoubler charge pump for the high-side and a linear regulator for the low-side.
The device uses a smart gate drive architecture to reduce system cost and improvereliability. The gate driver optimizes dead time to avoid shoot-through conditions, providescontrol to decreasing electromagnetic interference (EMI) through adjustable gate drive current, andprotects against drain to source and gate short conditions with VDS andVGS monitors.
A wide common mode shunt amplifierprovides inline current sensing to continuously measure motor current even during recirculatingwindows. The amplifier can be used in low-side or high-side sense configurations if inline sensingis not required.
The DRV8106-Q1 provide an array of protection features to ensurerobust system operation. These include under and overvoltage monitors for the power supply andcharge pump, VDS overcurrent and VGS gate faultmonitors for the external MOSFETs, offline open load and short circuit diagnostics, and internalthermal warning and shutdown protection.