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PDRV8300DIPWR ACTIVE

100-V max simple 3-phase gate driver with bootstrap diodes

Inventory: 240  
Limit:  50

Quality information

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REACH
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MSL rating / Peak reflow Call TI
Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
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Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (℃)
TSSOP (PW) | 20 1 | LARGE T&R
-40 to 125
Package | Pins TSSOP (PW) | 20
Package qty | Carrier: 1 | LARGE T&R
Operating temperature range (℃) -40 to 125
View TI packaging information

Features for the DRV8300

  • Triple Half-Bridge Gate driver
    • Drives 3 High-Side and 3 Low-Side N-Channel MOSFETs (NMOS)
  • Integrated Bootstrap Diodes (DRV8300D devices)
  • Supports Inverting and Non-Inverting INLx inputs
  • Bootstrap gate drive architecture
    • 750-mA source current
    • 1.5-A Sink current
  • Low leakage current on SHx pins (<55 µA)
  • Absolute maximum BSTx voltage upto 115-V
  • Supports negative Trasients upto -22-V on SHx pins
  • Buit-in cross conduction prevention
  • Adjustable Deadtime through DT pin for QFN package variants
  • Fixed Deadtime insertion of 200 nS for TSSOP package variants
  • Supports 3.3-V, and 5-V logic inputs with 20-V Abs Max
  • 4 nS typical propogation delay matching
  • Compact QFN and TSSOP packages and footprints
  • Efficient system design with Power Blocks
  • Integrated protection features
    • BST undervoltage lockout (BSTUV)
    • GVDD undervoltage (GVDDUV)

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Description for the DRV8300

DRV8300 family of devices provide three half-bridge gate drivers, each capable of driving high-side and low-side N-channel power MOSFETs. The DRV8300D generates the correct gate drive voltages using an integrated bootstrap diode and external capacitor for the high-side MOSFETs and GVDD for the low-side MOSFETs. The DRV8300N generates the correct gate drive voltages using an external bootstrap diode and external capacitor for the high-side MOSFETs and GVDD for the low-side MOSFETs. The Gate Drive architecture supports peak up to 750-mA source and 1.5-A sink currents.

The phase pins SHx is able to tolerate the significant negative voltage transients; while high side gate driver supply BSTx and GHx is able to support to higher positive voltage transients (115-V) abs max voltage which improves robustness of the system. Small propagation delay and delay matching specifications minimize the dead-time requirement which further improves efficiency. Undervoltage protection is provided for both low and high side through GVDD and BST undervoltage lockout.

Pricing


Qty Price (USD)
1-99 1.383
100-249 1.064
250-999 0.783
1,000+ 0.56