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PDRV8424ERGER ACTIVE

35V, 2.5A bipolar stepper or dual brushed motor driver with integrated current sensing

Inventory: 375
 

Quality information

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Packaging information

Package | Pins Package qty | Carrier Operating temperature range (°C)
VQFN (RGE) | 24 1 | LARGE T&R
-40 to 125
Package | Pins VQFN (RGE) | 24
Package qty | Carrier 1 | LARGE T&R
Operating temperature range (°C) -40 to 125
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Features for the DRV8424E

  • Dual H-bridge motor driver
    • One bipolar stepper motor
    • Dual bidirectional brushed-DC motors
    • Four unidirectional brushed-DC motors
  • Integrated current sense functionality
    • No sense resistors required
    • ±5% Full-scale current accuracy
  • 4.5- to 33-V Operating supply voltage range
  • Multiple control interface options
    • PHASE/ENABLE
    • PWM
  • Smart tune decay technology, fast and mixed decay options
  • Low RDS(ON):
    • 330 mΩ HS + LS at 24 V, 25°C (DRV8424E/P)
    • 550 mΩ HS + LS at 24 V, 25°C (DRV8425E/P)
  • High Current Capacity Per Bridge
    • DRV8424E/P: 4-A peak, 2.5-A Full-Scale, 1.8-A rms
    • DRV8425E/P: 3.2-A peak, 2-A Full-Scale, 1.4-A rms
  • Configurable Off-Time PWM Chopping
    • 7, 16, 24 or 32 µs
  • Supports 1.8-V, 3.3-V, 5.0-V logic inputs
  • Low-current sleep mode (2 µA)
  • Spread spectrum clocking for low electromagnetic interference (EMI)
  • Inrush current limiting in brushed-DC applications
  • Small package and footprint
  • Protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Overcurrent protection (OCP)
    • Thermal shutdown (OTSD)
    • Fault condition output (nFAULT)

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Description for the DRV8424E

The DRV8424E/P, DRV8425E/P devices are dual H-bridge motor drivers for awide variety of industrial applications. The devices can be used for driving two DC motors, or abipolar stepper motor. The output stage of the driver consists of N-channel power MOSFETsconfigured as two full H-bridges, charge pump regulator, current sensing and regulation, andprotection circuitry. The integrated current sensing uses an internal current mirror architecture,removing the need for a large power shunt resistor, saving board area and reducing system cost. Alow-power sleep mode is provided to achieve ultra- low quiescent current draw by shutting down mostof the internal circuitry. Internal protection features are provided for supply undervoltagelockout (UVLO), charge pump undervoltage (CPUV), output overcurrent (OCP), and deviceovertemperature (TSD). The DRV8424E/P is capable of driving up to 2.5-A full scale or 1.8-A rmsoutput current per H-bridge; and the DRV8425E/P is capable of driving up to 2-A full scale or 1.4-Arms output current per H-bridge (dependent on PCB design).

Pricing


Qty Price (USD)
1-99 2.727
100-249 2.39
250-999 1.675
1,000+ 1.35