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35V, 1.5A bipolar stepper or dual brushed motor driver with integrated current sensing

Inventory: 410

Quality information

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Packaging information

Package | Pins Package qty | Carrier Operating temperature range (°C)
VQFN (RGE) | 24 1 | LARGE T&R
-40 to 125
Package | Pins VQFN (RGE) | 24
Package qty | Carrier 1 | LARGE T&R
Operating temperature range (°C) -40 to 125
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Features for the DRV8426E

  • Dual H-bridge motor driver
    • One bipolar stepper motor
    • Dual bidirectional brushed-DC motors
    • Four unidirectional brushed-DC motors
  • Integrated current sense functionality
    • No sense resistors required
    • ±5% Full-scale current accuracy
  • 4.5- to 33-V Operating supply voltage range
  • Multiple control interface options
    • PWM
  • Smart tune decay technology, fast and mixed decay options
  • Low RDS(ON):
    • 900 mΩ HS + LS at 24 V, 25°C
  • High Current Capacity Per Bridge
    • 2.5-A peak, 1.5-A Full-Scale, 1.1-A rms
  • Configurable Off-Time PWM Chopping
    • 7, 16, 24 or 32 µs
  • Supports 1.8-V, 3.3-V, 5.0-V logic inputs
  • Low-current sleep mode (2 µA)
  • Spread spectrum clocking for low electromagnetic interference (EMI)
  • Inrush current limiting in brushed-DC applications
  • Small package and footprint
  • Protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Overcurrent protection (OCP)
    • Thermal shutdown (OTSD)
    • Fault condition output (nFAULT)

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Description for the DRV8426E

The DRV8426E/P devices are dual H-bridge motor drivers for a widevariety of industrial applications. The devices can be used for driving two DC motors, or a bipolarstepper motor. The output stage of the driver consists of N-channel power MOSFETs configured as twofull H-bridges, charge pump regulator, current sensing and regulation, and protection circuitry.The integrated current sensing uses an internal current mirror architecture, removing the need fora large power shunt resistor, saving board area and reducing system cost. A low-power sleep mode isprovided to achieve ultra- low quiescent current draw by shutting down most of the internalcircuitry. Internal protection features are provided for supply undervoltage lockout (UVLO), chargepump undervoltage (CPUV), output overcurrent (OCP), and device overtemperature (TSD). TheDRV8426E/P is capable of driving up to 1.5-A full scale or 1.1-A rms output current per H-bridge(dependent on PCB design).


Qty Price (USD)
1-99 2.485
100-249 2.177
250-999 1.526
1,000+ 1.23