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48-V, 1.5-A bipolar stepper or dual brushed  motor driver with integrated current sensing

US ECCN: EAR99 US/Local Export Classification Number

Inventory: 5  

Quality information

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& packaging information

Information included:

  • RoHS
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
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Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (°C)
-40 to 125
Package | Pins HTSSOP (PWP) | 28
Package qty | Carrier: 1 | LARGE T&R
Operating temperature range (°C) -40 to 125
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Features for the DRV8436E

  • Dual H-bridge motor driver
    • One bipolar stepper motor
    • Dual bidirectional brushed-DC motors
    • Four unidirectional brushed-DC motors
  • Integrated current sense functionality
    • No sense resistors required
    • ±7.5% Full-scale current accuracy
  • 4.5- to 48-V Operating supply voltage range
  • Multiple control interface options
    • PWM
  • Smart tune decay technology, fixed slow, fast and mixed decay options
  • Low RDS(ON): 900 mΩ HS + LS at 24 V, 25°C
  • High Current Capacity Per Bridge: 2.4-A peak, 1.5-A Full-Scale, 1.1-A rms
  • Configurable Off-Time PWM Chopping
    • 7, 16, 24 or 32 µs
  • Supports 1.8-V, 3.3-V, 5.0-V logic inputs
  • Low-current sleep mode (2 µA)
  • Spread spectrum clocking for low electromagnetic interference (EMI)
  • Small package and footprint
  • Protection features
    • VM undervoltage lockout (UVLO)
    • Charge pump undervoltage (CPUV)
    • Overcurrent protection (OCP)
    • Thermal shutdown (OTSD)
    • Fault condition output (nFAULT)

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Description for the DRV8436E

The DRV8436E/P devices are dual H-bridge motor drivers for a wide variety of industrial applications. The devices can be used for driving two DC motors, or a bipolar stepper motor. The output stage of the driver consists of N-channel power MOSFETs configured as two full H-bridges, charge pump regulator, current sensing and regulation, and protection circuitry. The integrated current sensing uses an internal current mirror architecture, removing the need for a large power shunt resistor, saving board area and reducing system cost. A low-power sleep mode is provided to achieve ultra- low quiescent current draw by shutting down most of the internal circuitry. Internal protection features are provided for supply undervoltage lockout (UVLO), charge pump undervoltage (CPUV), output overcurrent (OCP), and device overtemperature (TSD). The DRV8436E/P is capable of driving up to 1.5-A full scale or 1.1-A rms output current per H-bridge (dependent on PCB design).


Qty Price (USD)
1-99 2.638
100-249 2.312
250-999 1.621
1,000+ 1.306