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PLM74810QDRRRQ1 ACTIVE

Automotive ideal diode controller with active rectification driving B2B NFETs

Inventory: 1,641  
Limit:  250

Quality information

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Quality, reliability
& packaging information

Information included:

  • RoHS
  • REACH
  • Device marking
  • Lead finish/Ball material
  • MSL rating/Peak reflow
  • MTBF/FIT estimates
  • Material content
  • Qualification summary
  • Ongoing reliability monitoring
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Packaging information

Package | Pins Package qty | Carrier: Operating temperature range (°C)
WSON (DRR) | 12 3,000 | LARGE T&R
-40 to 125
Package | Pins WSON (DRR) | 12
Package qty | Carrier: 3,000 | LARGE T&R
Operating temperature range (°C) -40 to 125
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Features for the LM7481-Q1

  • AEC-Q100 qualified for automotive applications
    • Device temperature grade 1: –40°C to +125°C ambient operating temperature range
    • Device HBM ESD classification level 2
    • Device CDM ESD classification level C4B
  • 3-V to 65-V input range
  • Reverse input protection down to –65 V
  • Drives external back to back N-channel MOSFETs
  • Ideal diode operation with 9.1-mV A to C forward voltage drop regulation
  • Low reverse detection threshold (–4 mV) with fast response (0.5 µs)
  • Active rectification up to 200-KHz
  • 60-mA peak gate (DGATE) turn-on current
  • 2.6-A peak DGATE turnoff current
  • Integrated 3.8-mA charge pump
  • Adjustable over voltage protection
  • Low 2.87 µA shutdown current (EN/UVLO=Low)
  • 2.6-A peak DGATE turn-off current
  • Meets automotive ISO7637 transient requirements with a suitable TVS diode
  • Available in space saving 12-Pin WSON package

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Description for the LM7481-Q1

The LM74810-Q1 ideal diode controller drives and controls external back to back N-Channel MOSFETs to emulate an ideal diode rectifier with power path ON/OFF control and over voltage protection. The wide input supply of 3 V to 65 V allows protection and control of 12-V and 24-V automotive battery powered ECUs. The device can withstand and protect the loads from negative supply voltages down to –65 V. An integrated ideal diode controller (DGATE) drives the first MOSFET to replace a Schottky diode for reverse input protection and output voltage holdup. A strong charge pump of 3.8 mA with 60-mA peak GATE source current driver stage and short turn ON and turn OFF delay times ensures fast transient response ensuring robust and efficient MOSFET switching performance during automotive testing such as ISO16750 or LV124 where an ECU is subjected to input short interruptions and AC superimpose input signals upto 200-KHz frequency. With a second MOSFET in the power path the device allows load disconnect (ON/OFF control) and over voltage protection using HGATE control. The device features an adjustable over voltage cut-off protection feature for load dump protection.

Pricing


Qty Price (USD)
1-99 2.616
100-249 2.161
250-999 1.552
1,000+ 1.168