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PUCC5390ECQDWVRQ1

Automotive 10A/10A single-channel isolated gate driver for bipolar supply (E)

Packaging

Package | PIN: SOIC (DWV) | 8
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $2.95
10-24 $2.65
25-99 $2.47
100-249 $2.16
250-499 $2.03
500-749 $1.72
750-999 $1.45
1000+ $1.39

Features

  • Single channel SiC/IGBT isolated gate driver
  • Qualified for automotive applications
  • AEC-Q100 qualified with the following results
    • Device temperature grade 1
    • Device HBM ESD classification level H2
    • CDM ESD classification level C6
  • 12-V UVLO referenced to GND2
  • 8-pin DWV (8.5mm creepage) package
  • 60-ns (typical) propagation delay
  • Small part-to-part skew in propagation delay
  • 100-kV/µs minimum CMTI
  • Isolation barrier life > 40 Years
  • 10-A minimum peak current
  • 3-V to 15-V input supply voltage
  • Up to 33-V driver supply voltage
  • Negative 5-V handling capability on input pins
  • Safety-related certifications:
    • 7000-VPK isolation(DWV) per DIN V VDE V 0884-11:2017-01 (planned)
    • 5000-VRMS(DWV) isolation rating for 1 minuteper UL 1577 (planned)
    • CQC Certification per GB4943.1-2011(planned)
  • CMOS inputs
  • Operating temperature: –40°C to +125°C

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Texas Instruments  PUCC5390ECQDWVRQ1

The UCC5390-Q1 is a single-channel, isolated gate driver 10-A source and10-A sink peak current designed todrive MOSFETs, IGBTs, and SiC MOSFETs. TheUCC5390-Q1 has its UVLO2 referenced to GND2, which facilitates bipolar supplies and optimizes SiCand IGBT switching behavior and robustness.

The UCC5390-Q1 is available in 8.5 mm SOIC-8 (DWV) package and cansupport isolation voltage up to 5 kVRMS. With its high drive strength andtrue UVLO detection, this device is a good fit for driving IGBT and SiC MOSFETs in applicationssuch as on-board chargers and traction inverters.

Compared to an optocoupler, the UCC5390-Q1 has lower part-to-part skew, lower propagation delay, higheroperating temperature, and higher CMTI.