The UCC5870-Q1 device is a functional safety compliant, isolated, highly configureable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, NTC based over-temperature, and DESAT detection, including selectable soft turn off or two-level turn off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4A active Miller clamp during switching, and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to 6 analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.