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Automotive, functional safety compliant 15-A isolated IGBT/SiC MOSFET gate driver

Inventory: 3,127
Limit:  50

Quality information

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Packaging information

Package | Pins Package qty | Carrier Operating temperature range (°C)
SSOP (DWJ) | 36 37 | TUBE
-40 to 125
Package | Pins SSOP (DWJ) | 36
Package qty | Carrier 37 | TUBE
Operating temperature range (°C) -40 to 125
View TI packaging information

Features for the UCC5870-Q1

  • Split output driver provide 15-A peak source and 15-A peak sink currents
  • Adjustable "on the fly" gate drive strength
  • Interlock and shoot-through protection with 150ns(max) propagation delay and programmable minimum pulse rejection
  • Primary and Secondary side active short circuit (ASC) support
  • Configurable power transistor protections
    • DESAT based short circuit protection
    • Shunt resistor based over-current and short circuit protection
    • NTC based over-temperature protection
    • Programmable soft turnoff (STO) and two-level turnoff (2LTOFF) during power transistor faults
  • Integrated diagnostics: Documentation available to aid ISO26262 system design up to ASIL-D
    • Built in self test (BIST) for protection comparators
    • IN+ to transistor gate path integrity
    • Power transistor threshold monitoring
    • Internal clock monitoring
    • Fault alarm (nFLT1) and warning (nFLT2) outputs
  • Integrated 4-A active miller clamp or optional external drive for Miller clamp transistor
  • Advanced high voltage clamping control
  • Internal and external supply under-voltage and over-voltage protection
  • Active output pull-down and default low outputs with low supply or floating inputs
  • Driver die temperature sensing and over temperature protection
  • 100-kV/µs minimum common mode transient immunity (CMTI) at VCM = 1000-V
  • SPI based device reconfiguration, verification, supervision, and diagnosis
  • Integrated 10-bit ADC for power transistor temperature, voltage, and current monitoring
  • Certifications:
    • 3750-VRMS isolation for 1 minute per UL1577 (planned)

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Description for the UCC5870-Q1

The UCC5870-Q1 device is a functional safety compliant, isolated, highly configureable single-channel gate driver targeted to drive high power SiC MOSFETs and IGBTs in EV/HEV applications. Power transistor protections such as shunt resistor based over-current, NTC based over-temperature, and DESAT detection, including selectable soft turn off or two-level turn off during these faults. To further reduce the application size, the UCC5870-Q1 integrates a 4A active Miller clamp during switching, and an active gate pull-down while the driver is unpowered. An integrated 10-bit ADC enables monitoring of up to 6 analog inputs and the gate driver temperature for enhanced system management. Diagnostics and detection functions are integrated to simplify the design of ASIL-D compliant systems. The parameters and thresholds for these features are configurable using the SPI interface, which allows the device to be used with nearly any SiC MOSFET or IGBT.


Qty Price (USD)
1-99 8.125
100-249 6.624
250-999 5.206
1,000+ 4.416