SN74CB3Q3257RGYR ACTIVE

• High-Bandwidth Data Path
  (up to 500 MHz)
• 5-V Tolerant I/Os With Device Powered Up or Powered Down
• Low and Flat ON-State Resistance (r_on) Characteristics Over Operating Range
  (r_on= 4 Ω Typical)
• Rail-to-Rail Switching on Data I/O Ports
  • 0- to 5-V Switching With 3.3-V V_CC
  • 0- to 3.3-V Switching With 2.5-V V_CC
• Bidirectional Data Flow With Near-Zero Propagation Delay
• Low Input and Output Capacitance Minimizes Loading and Signal Distortion
  (C_io(OFF) = 3.5 pF Typical)
• Fast Switching Frequency (f _OE = 20 MHz Maximum)
• Data and Control Inputs Provide Undershoot Clamp Diodes
• Low Power Consumption
  (I_CC = 0.7 mA Typical)
• V_CC Operating Range From 2.3 V to 3.6 V
• Data I/Os Support 0- to 5-V Signaling Levels
  (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
• Control Inputs Can Be Driven by TTL or
  5-V/3.3-V CMOS Outputs
• I_off Supports Partial-Power-Down Mode Operation
• Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
• ESD Performance Tested Per JESD 22
  • 2000-V Human Body Model
    (A114-B, Class II)
  • 1000-V Charged-Device Model (C101)
• Supports Both Digital and Analog Applications: USB Interface, Differential Signal Interface,
  Bus Isolation, Low-Distortion Signal Gating ⁽¹⁾

⁽¹⁾For additional information regarding the performance
characteristics of the CB3Q family, refer to the TI application report, CBT-C, CB3T, and CB3Q Signal-Switch Families, SCDA008.