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8-Pin High Frequency 4-Amp Sink Synchronous MOSFET Driver

Availability: 7,805


Package | PIN: VSON (DRB) | 8
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $1.61
10-24 $1.44
25-99 $1.34
100-249 $1.17
250-499 $1.08
500-749 $0.90
750-999 $0.74
1000+ $0.68


  • Drives Two N-Channel MOSFETs with 14-ns Adaptive Dead Time
  • Wide Gate Drive Voltage: 4.5 V Up to 8.8 V With Best Efficiency at 7 V to 8 V
  • Wide Power System Train Input Voltage: 3 V Up to 27 V
  • Wide Input PWM Signals: 2.0 V up to 13.2-V Amplitude
  • Capable to Drive MOSFETs with ≥40-A Current per Phase
  • High Frequency Operation: 14-ns Propagation Delay and 10-ns Rise/Fall Time Allow FSW – 2 MHz
  • Capable to Propagate <30-ns Input PWM Pulses
  • Low-Side Driver Sink On-Resistance (0.4 Ω) Prevents dV/dT Related Shoot-Through Current
  • 3-State PWM Input for Power Stage Shutdown
  • Space Saving Enable (Input) and Power Good (Output) Signals on Same Pin
  • Thermal Shutdown
  • UVLO Protection
  • Internal Bootstrap Diode
  • Economical SOIC-8 and Thermally Enhanced 3-mm x 3-mm DFN-8 Packages
  • High Performance Replacement for Popular 3-State Input Drivers

Texas Instruments  TPS28225DRBT

The is a high-speed driver for N-channel complimentary driven power MOSFETs with adaptive dead-time control. This driver is optimized for use in variety of high-current one and multi-phase DC-to-DC converters. The is a solution that provides high efficiency, small size and low EMI emissions.

The efficiency is achieved by up to 8.8-V gate drive voltage, 14-ns adaptive dead-time control, 14-ns propagation delays and high-current 2-A source and 4-A sink drive capability. The 0.4-Ω impedance for the lower gate driver holds the gate of power MOSFET below its threshold and ensures no shoot-through current at high dV/dt phase node transitions. The bootstrap capacitor charged by an internal diode allows use of N-channel MOSFETs in a half-bridge configuration.