TPS50601AHKH/EM ACTIVE

Features for the TPS50601A-SP

• 5962-10221:
  • Radiation hardened up to TID 100krad(Si)
  • ELDRS free 100 krad(Si) – 10 mrad(Si)/s
  • Singlelhup (SEL) Immune to
    LET = 75 MeV-cm²/mg
  • SEB and SEGR immuneto 75 MeV-cm²/mg, SOA Curve Available
  • SET/SEFICross-section plot available
• peak efficiency: 96.6% (V_O = 3.3 V)
• Integrated 58-mΩ/50-mΩ MOSFETs
• Power rail: 3 to 7 V on VIN
• 6-A Maximum output current
• Flexible switching frequency options:
  • 100-kHz to 1-MHz Adjustable internaloscillator
  • External sync capability: 100 kHz to 1 MHz
  • Syncpin can be configured as a 500-kHz output for master/slaveapplications
• 0.804-V ±1.5% Voltage reference overtemperature, radiation, and line and load regulation
• Monotonic start-up into prebiased outputs
• Adjustable soft start through external capacitor
• Input enable and power-good output for power sequencing
• Power good output monitor for undervoltage and overvoltage
• Adjustable input undervoltage lockout (UVLO)
• 20-Pin Ultra-small, thermally-enhanced ceramic flatpack package (hkh) for space applications

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Description for the TPS50601A-SP

TheTPS50601A-SP is a radiation hardened, 7-V, 6-A synchronous step-down converter, which isoptimized for small designs through high efficiency and integrating the high-side and low-sideMOSFETs. Further space savings are achieved through current mode control, which reduces componentcount, and a high switching frequency, reducing the inductor’s footprint. The devices are offeredin an ultra small, thermally enhanced 20-pin ceramic flatpack package.

The output voltage startup ramp is controlled by the SS/TR pin which allows operation aseither a stand alone power supply or in tracking situations. Power sequencing is also possible bycorrectly configuring the enable and the open drain power good pins. In addition, the TPS50601A-SPcan be configured in master-slave mode to provide up to 12-A of output current.

Cycle-by-cycle current limiting on the high-side FET protects the device in overloadsituations and is enhanced by a low-side sourcing current limit which prevents current runaway.There is also a low-side sinking current limit which turns off the low-side MOSFET to preventexcessive reverse current. Thermal shutdown disables the part when die temperature exceeds thermalshutdown temperature.