TS3USB221EEVM TS3USB221E Evaluation Module angled board image

TS3USB221EEVM

TS3USB221E Evaluation Module

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Features for the TS3USB221EEVM

  • VCC Operation at 2.5 V and 3.3 V
  • VI/O Accepts Signals up to 5.5 V
  • 1.8-V Compatible Control-Pin Inputs
  • Low-Power Mode When OE Is Disabled (1 mA)
  • rON = 6Ω Maximum
  • ΔrON = 0.2Ω Typical
  • Cio(on) = 6pF Typical
  • Low Power Consumption (30 mA Maximum)
  • High Bandwidth (1 GHz Typical)
  • ESD Performance Tested Per JESD 22:

  • 7000-V Human-Body Model (HBM)
    1000-V Charged-Device Model (CDM)
  • ESD Performance I/O to GND:

  • 12000-V Human-Body Model (HBM)
    7000-V Contact Discharge (IEC 61000-4-2)

Description for the TS3USB221EEVM

The TS3USB221EEVM is an evaluation module for the Texas Instruments high-speed USB 2.0 (480-Mbps) 1:2 multiplexer/demultiplexer switch. The USB221EEVM allows signals to pass with minimum edge and phase distortion, integrates IEC-level ESD protection cells on all pins, and also multiplexes differential signals from a common USB input to one of two corresponding outputs. This evaluation module demonstrates the low bit-to-bit skew, high channel-to-channel noise isolation, and compatibility with various standards, such as high-speed USB 2.0 (480 Mbps), that is possible when using the TS3USB221E in high-speed signaling applications.

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