Features for the UCC21732QDWEVM-025
- 10-A peak, split output drive current with programmable drive voltages
- Two 5.7-kVrms reinforced isolated channels to support up to 1700 V input rail
- Short circuit protection with two-level soft turn OFF and Miller clamp drive signal for external FET
- Robust noise-immune solution with CMTI > 100 V/ns
Description for the UCC21732QDWEVM-025
The UCC21732QDWEVM-025 is a compact, single channel isolated gate driver board providing drive, bias voltages, protection and diagnostic needed for SiC MOSFET and Si IGBT Power Modules housed in 150 x 62 x 17 mm and 106 x 62 x 30 mm packages. This TI EVM is based on 5.7-kVrms reinforced isolation drivers UCC217XX in SOIC-16DW package with 8.0 mm creepage and clearance. The EVM includes SN6505B based isolated DC-DC transformer bias supplies.