Packaging information
| Package | Pins SOIC (DW) | 16 |
| Operating temperature range (°C) -40 to 150 |
| Package qty | Carrier 40 | TUBE |
Features for the UCC21759-Q1
- 3kVRMS single channel isolated gate driver
- AEC-Q100 qualified for
automotive applications
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classofication level C3
- Drives SiC MOSFETs and IGBTs up to 900Vpk
- 33V maximum output drive voltage (VDD-VEE)
- High peak drive current and high CMTI
- ±10A drive strength and split output
- 150V/ns minimum CMTI
- 200ns response time fast DESAT protection
- 4A internal active Miller clamp
- 400mA soft turn-off under fault conditions
- Isolated analog sensor with PWM
output for
- Temperature sensing with NTC, PTC or thermal diode
- High voltage DC-Link or phase voltage
- Alarm FLT on over current and reset from RST/EN
- Fast enable/disable response on RST/EN
- Rejects <40ns noise transients and pulses on input pins
- 12V VDD UVLO with power good on RDY
- Inputs/outputs with over/under-shoot transient voltage immunity up to 5V
- 130ns (maximum) propagation delay and 30ns (maximum) pulse/part skew
- SOIC-16 DW package with creepage and clearance distance > 8mm
- Operating junction temperature –40°C to +150°C
- Safety-related certifications:
- 4242VPK basic isolation per EN IEC 60747-17 (VDE 0884-17)
Description for the UCC21759-Q1
The UCC21759-Q1 is a galvanic isolated single channel gate driver designed for SiC MOSFETs and IGBTs up to 900V DC operating voltage with advanced protection features, best-in-class dynamic performance and robustness. UCC21759-Q1 has up to ±10A peak source and sink current.
The input side is isolated from the output side with SiO2 capacitive isolation technology, supporting up to 636VRMS working voltage with longer than 40 years isolation barrier life, 6kVPK surge immunity, as well as providing low part-to-part skew, and >150V/ns common mode noise immunity (CMTI).
The UCC21759-Q1 includes the state-of-art protection features, such as fast short circuit detection, fault reporting, active Miller clamp, and input and output side power supply UVLO optimized for SiC and IGBT power transistors. The isolated analog to PWM sensor can be utilized for easier temperature or voltage sensing, further increasing the drivers’ versatility and simplifying the system design effort, size, and cost.