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XINA819IDGKT

35-μV Offset, 8-nV/√Hz noise, low-power, precision instrumentation amplifier

Packaging

Package | PIN: VSSOP (DGK) | 8
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $4.35
10-24 $3.92
25-99 $3.64
100-249 $3.19
250-499 $3.00
500-749 $2.54
750-999 $2.15
1000+ $2.05

Features

  • Low offset voltage: 10 µV (typ),35 µV (max)
  • Gain drift: 5 ppm/°C (G = 1),
    35 ppm/°C (G > 1) (max)
  • Noise: 8 nV/√Hz
  • Bandwidth: 2 MHz (G = 1), 270 kHz (G = 100)
  • Stable with 1-nF capacitive loads
  • Inputs protected up to ±60 V
  • Common-mode rejection: 110 dB, G = 10 (min)
  • Power supply rejection: 110 dB, G = 1 (min)
  • Supply current: 385 µA (max)
  • Supply range:
    • Single supply: 4.5 V to 36V
    • Dual supply: ±2.25 V to ±18V
  • Specified temperature range: –40°C to +125°C
  • Packages: 8-pin SOIC and VSSOP

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Texas Instruments  XINA819IDGKT

The INA819 is a high-precision instrumentation amplifier that offers low powerconsumption and operates over a very wide single-supply or dual-supply range. A single externalresistor sets any gain from 1 to 10,000. The device offers high precision as a result of super-betainput transistors, which provide exceptionally low input offset voltage, offset voltage drift,input bias current, input voltage, and current noise. Additional circuitry protects the inputsagainst overvoltage up to ±60 V.

The INA819 is optimized to provide a high common-mode rejection ratio. At G = 1, thecommon-mode rejection ratio exceeds 90 dB across the full input common-mode range. The device isdesigned for low-voltage operation from a 4.5-V single supply, as well as dual supplies up to ±18V.

The INA819 is available in an 8-pin SOIC and 8-pin VSSOP package, and is specified overthe –40°C to +125°C temperature range.