XLMG3425R030RQZT ACTIVE

Features for the LMG3425R030

• Qualified for JEDEC JEP180 for hard-switching topologies
• 600-V GaN-on-Si FET with Integrated gate driver
  • Integrated high precision gate bias voltage
  • 200-V/ns CMTI
  • 2.2-MHz switching frequency
  • 30-V/ns to 150-V/ns slew rate for optimization of switching performance and EMI mitigation
  • Operates from +12-V unregulated supply
• Robust protection
  • Cycle-by-cycle overcurrent and latched short-circuit protection with < 100-ns response
  • Withstands 720-V surge while hard-switching
  • Self-protection from internal overtemperature and UVLO monitoring
• Advanced power management
  • Digital temperature PWM output
  • Ideal diode mode reduces third-quadrant losses in LMG3425R030

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Description for the LMG3425R030

The LMG342xR030 GaN FET with integrated driver and protection enables designers to achieve new levels of power density and efficiency in power electronics systems.

The LMG342xR030 integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared to discrete silicon gate drivers. This integration, combined with our low-inductance package, delivers clean switching and minimal ringing in hard-switching power supply topologies. Other features, including adjustable gate drive strength for EMI control, overtemperature, and robust overcurrent protection with fault indication, provide optimized BOM cost, board size, and footprint.

Advanced power management features include digital temperature reporting and TI’s ideal diode mode. The temperature of the GaN FET is reported through a variable duty cycle PWM output, which enables the system to optimally manage loading. Ideal diode mode maximizes efficiency by reducing third-quadrant losses by enabling adaptive dead-time control.