BQ2205LYPW

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BQ2205LYPW

Battery Back-up Supervisor for Dual SRAM Banks

Packaging

Package | PIN: PW | 16
Temp: S (-20 to 70)
Carrier: Partial Tube
Qty Price
1-9 $4.60
10-24 $4.14
25-99 $3.87
100-249 $3.47
250-499 $3.24
500-749 $2.82
750-999 $2.44
1000+ $2.39

Features

  • Power Monitoring and Switching for Non-Volatile Control of SRAMs
  • Input Decoder Allows Control of 1 or 2 Banks of SRAM
  • Write-Protect Control
  • 3-V Primary Cell Input
  • 3.3-V Operation
  • Reset Output for System Power-On Reset
  • Less than 20-ns Chip Enable Propagation Delay
  • Small 16-Lead TSSOP Package
  • APPLICATIONS
    • NVSRAM Modules
    • Point-of-Sale Systems
    • Facsimile, Printers and Photocopiers
    • Internet Appliances
    • Servers
    • Medical Instrumentation and Industrial Products

Texas Instruments  BQ2205LYPW

The CMOS bq2205 SRAM non-volatile controller with reset provides all the necessary functions for converting one or two banks of standard CMOS SRAM into non-volatile read/write memory.

A precision comparator monitors the 3.3-V VCC input for an out-of-tolerance condition. When out-of-tolerance is detected, the two conditioned chip-enable outputs are forced inactive to write-protect both banks of SRAM.

Power for the external SRAMs, VOUT, is switched from the VCC supply to the battery-backup supply as VCC decays. On a subsequent power-up, the VOUT supply is automatically switched from the backup supply to the VCC supply. The external SRAMs are write-protected until a power-valid condition exists. The reset output provides power-fail and power-on resets for the system. During power-valid operation, the input decoder, A, selects one of two banks of SRAM.