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Voltage Protection for 3 to 6 Series Cell Lithium-Ion/Polymer Batteries

Qty Price
1-9 $1.54
10-24 $1.38
25-99 $1.28
100-249 $1.12
250-499 $1.03
500-749 $0.86
750-999 $0.71
1000+ $0.65


  • Single IC Li-Ion Protection for 3-Series to 6-Series Cells
  • Stackable to Protect up to 18-Series Cells
  • Programmable Detection Time Delay
  • Low Power Consumption
    • Typical 2-µA to 2.5-µA Normal Mode
  • Fixed 4.225 V Overvoltage Threshold
  • Highly Accurate: ±20-mV MAX, TA = 0°C to 50°C
  • Output Activation for Low Side FET
    (Contact TI for Alternate Output Options: High/Low-side Fuse or FET)
  • Protected Output, Power, and Ground Pins for Added Safety and Reliability
  • Permanent or Recoverable Fault Options
  • 16-pin Small Outline Package
    • Primary or Secondary Level Voltage Protection for Li-Ion Battery Packs for Use in:
      • Power Tools
      • UPS Systems
      • E-Bikes, Scooters, and Small Mobility Vehicles
      • Medical Devices, Test Equipment, and Industrial Products
  • Texas Instruments  BQ77PL157APWR-4225

    The bq77PL157 is a stackable overvoltage protection device for 3, 4, 5 or 6 series cell Li-Ion battery packs. This device incorporates a precise and accurate overvoltage detection circuit with preconfigured threshold limits. Additional features include the ability to stack multiple parts to monitor up to 18 series cells.


    Each series cell in a Li-Ion battery pack is compared to an internal reference voltage. If one cell reaches an overvoltage condition, the protection sequence begins. The bq77PL157 starts charging an external capacitor through the CD pin. When the CD pin voltage reaches 1.2 V, the OUT pin changes state and the LVO pin becomes active.

    If multiple bq77PL157 devices are stacked, the LVIN pin of the next-lower device receives the LVO pin from the above device and similarly starts a shortened delay timer before activating its OUT pin. (No additional isolation or level-shift circuitry is required.) The lowest bq77PL157 in the string is used to activate a power MOSFET located in the low side of the power path.