CSD25501F3

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CSD25501F3

–20-V P-Channel FemtoFET™ MOSFET

Packaging

Package | PIN: YJN | 3
Temp: S (-55 to 150)
Carrier: Cut Tape
Qty Price
1-9 $0.20
10-24 $0.18
25-99 $0.16
100-249 $0.14
250-499 $0.12
500-749 $0.10
750-999 $0.07
1000+ $0.06

Features

  • Low On-Resistance
  • Ultra-Low Qg and Qgd
  • Ultra-Small Footprint
    • 0.7 mm × 0.6mm
  • Low Profile
    • 0.22-mm MaxHeight
  • Integrated ESD Protection Diode
  • Lead and Halogen Free
  • RoHS Compliant

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Texas Instruments  CSD25501F3

This –20-V, 64-mΩ, P-Channel FemtoFET™MOSFET is designed and optimized to minimize the footprint in many handheld and mobileapplications. This technology is capable of replacing standard small signal MOSFETs while providinga substantial reduction in footprint size. The integrated 10-kΩ clamp resistor(RC) allows the gate voltage (VGS) to be operatedabove the maximum internal gate oxide value of –6 V, depending on duty cycle. The gate leakage(IGSS) through the diode increases as VGS isincreased above –6 V.