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Step-Down DC-DC Converter with Analog Bypass Mode for RF Power Amplifiers


Package | PIN: YZR | 16
Temp: S (-30 to 85)
Carrier: Cut Tape
Qty Price
1-9 $3.06
10-24 $2.76
25-99 $2.57
100-249 $2.25
250-499 $2.11
500-749 $1.79
750-999 $1.51
1000+ $1.44


  • 1.6 MHz (typ.) PWM Switching Frequency
  • ACB Reduces Inductor Requirements and Size
  • Operates From a Single Li-Ion Cell (2.7V to 5.5V)
  • Dynamically Adjustable Output Voltage (0.5V to 3.4V)
  • 2.5A Maximum Load Current
  • Analog Bypass Function With Low Bypass Resistance
    (33 mΩ typ.)
  • High Efficiency to 95% with Internal Synchronous
  • 16-bump DSBGA Package
  • Current Overload Protection
  • Thermal Overload Protection

Texas Instruments  LM3212TL/NOPB

The LM3212 is a DC-DC converter optimized for powering GSM RF power amplifiers (PAs) from a single Lithium-Ion cell; however, it may also be used in other applications. The LM3212 steps down an input voltage from 2.7V to 5.5V to a dynamically adjustable output voltage of 0.5V to 3.4V. The output voltage is set through a VCON analog input that adjusts the output voltage to ensure efficient operation at all power levels of the RF PA.

The LM3212 has a unique Active Current Bypass (ACB) feature that speeds up output voltage transition times, provides extra drive and a low-resistance analog bypass. The LM3212 has an AUTO_BY pin to force the LM3212 into bypass mode during low input-voltage operation thus overriding the automatic analog bypass feature. Forced bypass can also be achieved by setting VCON > VIN/2.5.

In addition the LM3212 offers a fixed-frequency PWM mode to minimize RF interference and a shutdown mode to turn the device off and reduce battery consumption to 0.02 µA (typ.)

The LM3212 is available in a 16-bump lead-free DSBGA package. A 1.6 MHz switching frequency allows use of tiny surface-mount components for the required inductor and two ceramic capacitors.