LM5109BSD/NOPB

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LM5109BSD/NOPB

High Voltage 1A Peak Half Bridge Gate Driver

Packaging

Package | PIN: NGT | 8
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $1.18
10-24 $1.06
25-99 $0.99
100-249 $0.86
250-499 $0.79
500-749 $0.66
750-999 $0.55
1000+ $0.50

Features

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1-A Peak Output Current (1.0-A Sink and 1.0-A Source)
  • Inputs Compatible With Independent TTL and CMOS
  • Bootstrap Supply Voltage to 108-V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000-pF Load With 15-ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Undervoltage Lockout
  • Low Power Consumption
  • 8-Pin SOIC and Thermally-Enhanced 8-Pin WSON Package

Texas Instruments  LM5109BSD/NOPB

The LM5109B device is a cost-effective, high-voltage gate driver designed to drive both the high-side and the low-side N-channel MOSFETs in a synchronous buck or a half-bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90 V. The outputs are independently controlled with cost-effective TTL and CMOS-compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Undervoltage lockout is provided on both the low-side and the high-side power rails. The device is available in the 8-pin SOIC and thermally-enhanced 8-pin WSON packages.