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8GHz Ultra Wideband Fully Differential Amplifier


Package | PIN: RMS | 14
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $13.20
10-24 $12.27
25-99 $11.84
100-249 $10.35
250-499 $9.85
500-749 $9.06
750-999 $8.13
1000+ $8.11


  • Gain Bandwidth Product (GBP): 8 GHz
  • Excellent Linearity Performance:
    DC to 2 GHz, G = 12 dB
  • Slew Rate: 17,500 V/µs
  • Low HD2, HD3 Distortion
    (1 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 100 MHz:HD2 at –104 dBc, HD3 at –96 dBc
    • 200 MHz: HD2 at –95 dBc, HD3 at –92 dBc
    • 500 MHz: HD2 at –80 dBc, HD3 at –77 dBc
    • 1 GHz: HD2 at –64dBc, HD3 at –58 dBc
  • Low IMD2, IMD3 Distortion
    (2 VPP, 200 Ω, DE-DE, G = 12 dB):
    • 200 MHz:IMD2 at –96 dBc, IMD3 at –95 dBc
    • 500 MHz: IMD2 at –80 dBc, IMD3 at –83dBc
    • 1 GHz: IMD2 at –70 dBc, IMD3 at –63dBc
  • Input Voltage Noise: 1.25 nV/√Hz
  • Input Current Noise: 3.5 pA/√Hz
  • Supports Single- and Dual-Supply Operation
  • Power Consumption: 55 mA
  • Power-Down Feature

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Texas Instruments  LMH5401IRMST

The LMH5401 device is a very high-performance, differential amplifier optimized for radiofrequency (RF), intermediate frequency (IF), or high-speed, dc-coupled, time-domain applications.The device is ideal for dc- or ac-coupled applications that may require asingle-ended-to-differential (SE-DE) conversion when driving an analog-to-digital converter (ADC).The LMH5401 generates very low levels of second- and third-order distortion when operating in SE-DEor differential-to-differential (DE-DE) mode.

The amplifier is optimized for use in both SE-DE and DE-DE systems.The device has unprecedented usable bandwidth fromDC to 2 GHz. The LMH5401 can be used for SE-DE conversions in the signal chain without externalbaluns in a wide range of applications such as test and measurement, broadband communications, andhigh-speed data acquisition.

A common-mode reference input pin aligns the amplifier output common-mode with the ADCinput requirements. Power supplies between 3.3 V and 5 V can be selected and dual-supply operationis supported when required by the application. A power-down feature is also available for powersavings.

This level of performance is achieved at a very low power level of 275 mW when a 5-Vsupply is used. The device is fabricated in Texas Instruments’ advanced complementary BiCMOSprocess and is available in a space-saving, UQFN-14 package for higher performance.