OPA202IDR

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OPA202IDR

Precision, Low-Power, Low-Noise, Heavy Capacitive Drive, 36-V Op Amp with SuperBeta Input

Packaging

Package | PIN: D | 8
Temp: T (-40 to 105)
Carrier: Cut Tape
Qty Price
1-9 $1.32
10-24 $1.18
25-99 $1.09
100-249 $0.93
250-499 $0.86
500-749 $0.70
750-999 $0.56
1000+ $0.50

Features

  • Precision Super-β Performance:
    • Low Offset Voltage: 200 µV (Maximum)
    • Ultra-Low Drift: 1 µV/°C (Maximum)
  • Excellent Efficiency:
    • Quiescent Current: 580 µA (Typical)
    • Gain-Bandwidth Product: 1 MHz
    • Low Input Voltage Noise: 9 nV/ √Hz
  • Ease of Use, Design Simplicity:
    • Heavy Capacitive Load Drive: 5-µs Settling Time With 25 nF
    • Ultra-High Input Impedance: 3000 GΩ and 0.5 pF
    • EMIHardened, Thermal and Short-Circuit Protection
  • Stable Performance:
    • High CMRR and AOL: 126 dB (Minimum)
    • High PSRR: 126 dB (Minimum)
  • Low Bias Current: 2 nA (Maximum)
  • Low 0.1 Hz to 10 Hz Noise: 0.2 µVpp
  • Wide Supply Voltage: ±2.25 V to ±18 V
  • Replaces OP-07 and OP-27

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Texas Instruments  OPA202IDR

The OPA202 device is built on TI’s industry-leading precision super-β complementarybipolar semiconductor process which offers ultra-low flicker noise, low offset voltage, low offsetvoltage temperature drift, and excellent linearity with common-mode and power supply variation. Thedevice offers an exceptional combination of DC precision, heavy capacitive load drive, andprotection against external EMI, thermal, and short-circuit events.

Supply current is 580 µA at ±18 V. The OPA202 device does not exhibit phase inversion,and the series is stable with high capacitive loads. The OPA202 is fully specified with atemperature range from –40°C to +105°C.