SN74CB3Q3125DBQR

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SN74CB3Q3125DBQR

Quadruple FET 2.5-V/3.3-V Low-Voltage High-Bandwidth Bus Switch

Packaging

Package | PIN: DBQ | 16
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $0.81
10-24 $0.72
25-99 $0.67
100-249 $0.57
250-499 $0.53
500-749 $0.43
750-999 $0.34
1000+ $0.31

Features

  • High-Bandwidth Data Path (up to 500 MHz(1))
  • 5-V Tolerant I/Os With Device Powered Up
    or Powered Down
  • Low and Flat ON-State Resistance (ron)
    Characteristics Over Operating Range
    (ron = 3 Ω Typ)
  • Rail-to-Rail Switching on Data I/O Ports
    • 0-V to 5-V Switching With 3.3-V VCC
    • 0-V to 3.3-V Switching With 2.5-V VCC
  • Bidirectional Data Flow With Near-Zero
    Propagation Delay
  • Low Input and Output Capacitance Minimizes
    Loading and Signal Distortion
    (Cio(OFF) = 4 pF Typ)
  • Fast Switching Frequency (fOE = 20 MHz Max)
  • Data and Control Inputs Provide Undershoot
    Clamp Diodes
  • Low Power Consumption
    (ICC = 0.3 mA Typ)
  • VCC Operating Range From 2.3 V to 3.6 V
  • Data I/Os Support 0-V to 5-V Signaling Levels
    (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V, 3.3 V, 5 V)
  • Control Inputs Can Be Driven by TTL,
    5-V, or 3.3-V CMOS Outputs
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Supports Both Digital and Analog Applications:
    USB Interface, Differential Signal Interface, Bus
    Isolation, Low-Distortion Signal Gating

Texas Instruments  SN74CB3Q3125DBQR

The SN74CB3Q3125 device is a high-bandwidth FET bus switch that uses a charge pump to elevate the gate voltage of the pass transistor, thus providing a low and flat ON-state resistance (ron). The low and flat ON-state resistance allows for minimal propagation delay and supports rail-to-rail switching on the data input/output (I/O) ports. The SN74CB3Q3125 device also features low data I/O capacitance to minimize capacitive loading and signal distortion on the data bus.