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Low-Voltage 10-Bit FET Bus Switch With Internal Pulldown Resistors


Package | PIN: DW | 24
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $0.78
10-24 $0.69
25-99 $0.64
100-249 $0.55
250-499 $0.51
500-749 $0.41
750-999 $0.33
1000+ $0.30


  • Enable Signal Is SSTL_2 Compatible
  • Flow-Through Architecture Optimizes PCB Layout
  • Designed for Use With 200 Mbit/s Double Data-Rate (DDR) SDRAM Applications
  • Switch On-State Resistance Is Designed to Eliminate Series Resistor to DDR SDRAM
  • Internal 10-k Pulldown Resistors to Ground on B Port
  • Internal 50-k Pullup Resistor on Output-Enable Input
  • Rail-to-Rail Switching on Data I/O Ports
  • Ioff Supports Partial-Power-Down Mode Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II

Texas Instruments  SN74CBTLV3857DWR

This 10-bit FET bus switch is designed for 3-V to 3.6-V VCC operation and SSTL_2 output-enable (OE\) input levels.

When OE\ is low, the 10-bit bus switch is on, and port A is connected to port B. When OE\ is high, the switch is open, and the high-impedance state exists between the two ports. There are 10-k pulldown resistors to ground on the B port.

The FET switch on-state resistance is designed to replace the series terminating resistor in the SSTL_2 data path.

This device is fully specified for partial-power-down applications using Ioff. The Ioff feature ensures that damaging current will not backflow through the device when it is powered down. The device has isolation during power off.