|Package | PIN:||DW | 24|
|Temp:||I (-40 to 85)|
- Operating Voltage Range of 4.5 V to 5.5 V
- Low Power Consumption, 80-µA Max ICC
- Typical tpd = 12 ns
- ±6-mA Output Drive at 5 V
- Low Input Current of 1 µA Max
- Inputs Are TTL-Voltage Compatible
- Independent Registers and Enables for A and B Buses
- Multiplexed Real-Time and Stored Data
- True Data Paths
- High-Current 3-State Outputs Can Drive Up To 15 LSTTL Loads
Texas Instruments SN74HCT652DWR
The HCT652 devices consist of bus-transceiver circuits, D-type flip-flops, and control circuitry arranged for multiplexed transmission of data directly from the data bus or from the internal storage registers. Output-enable (OEAB and OEBA\) inputs are provided to control the transceiver functions. Select-control (SAB and SBA) inputs are provided to select real-time or stored data transfer. A low input level selects real-time data; a high input level selects stored data. Figure 1 illustrates the four fundamental bus-management functions that can be performed with these devices.
Data on the A or B data bus, or both, can be stored in the internal D-type flip-flops by low-to-high transitions at the appropriate clock (CLKAB or CLKBA) terminals, regardless of the select- or output-control terminals. When SAB and SBA are in the real-time transfer mode, it is possible to store data without using the internal D-type flip-flops by simultaneously enabling OEAB and OEBA\. In this configuration, each output reinforces its input. When all other data sources to the two sets of bus lines are at high impedance, each set of bus lines remains at its last state.
To ensure the high-impedance state during power up or power down, OEBA\ should be tied to VCC through a pullup resistor and OEAB should be tied to GND through a pulldown resistor; the minimum value of the resistor is determined by the current-sinking/current-sourcing capability of the driver.