SN74LVC1G38DRYR

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SN74LVC1G38DRYR

Single 2-Input NAND Gate with Open-Drain Output

Packaging

Package | PIN: DRY | 6
Temp: Q (-40 to 125)
Carrier: Cut Tape
Qty Price
1-9 $0.27
10-24 $0.23
25-99 $0.21
100-249 $0.18
250-499 $0.16
500-749 $0.13
750-999 $0.10
1000+ $0.08

Features

  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 200-V Machine Model (A115-A)
    • 1000-V Charged-Device Model (C101)
  • Available in the Texas Instruments
    NanoStar™ and NanoFree™ Packages
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Supports Down Translation to VCC
  • Maximum tpd of 4.5 ns at 3.3 V
  • Low Power Consumption, 10-µA Maximum ICC
  • ±24-mA Output Drive at 3.3 V
  • Ioff Supports Partial-Power-Down Mode and Back-Drive Protection

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Texas Instruments  SN74LVC1G38DRYR

The SN74LVC1G38 device is designed for 1.65-V to 5.5-V VCCoperation.

This device is a single two-input NAND buffer gate with open-drain output. It performsthe Boolean function Y = A × B or Y = A +B in positive logic.

This device is fully specified for partial-power-down applications usingIoff. The Ioff circuitry disables the outputs whenthe device is powered down. This inhibits current backflow into the device which prevents damage tothe device.

NanoStar™ and NanoFree™ package technology is a major breakthrough in IC packagingconcepts, using the die as the package.