SN74TVC3010DWR

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SN74TVC3010DWR

10-Bit Voltage Clamp

Packaging

Package | PIN: DW | 24
Temp: I (-40 to 85)
Carrier: Cut Tape
Qty Price
1-9 $1.81
10-24 $1.62
25-99 $1.51
100-249 $1.31
250-499 $1.21
500-749 $1.02
750-999 $0.84
1000+ $0.77

Features

  • Designed to be Used in Voltage-Limiting Applications
  • 6.5- On-State Connection Between Ports A and B
  • Flow-Through Pinout for Ease of Printed Circuit Board Trace Routing
  • Direct Interface With GTL+ Levels
  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model (A114-A)
    • 1000-V Charged-Device Model (C101)

Texas Instruments  SN74TVC3010DWR

The SN74TVC3010 provides 11 parallel NMOS pass transistors with a common gate. The low on-state resistance of the switch allows connections to be made with minimal propagation delay.

The device can be used as a 10-bit switch with the gates cascaded together to a reference transistor. The low-voltage side of each pass transistor is limited to a voltage set by the reference transistor. This is done to protect components with inputs that are sensitive to high-state voltage-level overshoots. (See Application Information in this data sheet.)

All of the transistors in the TVC array have the same electrical characteristics; therefore, any one of them can be used as the reference transistor. Since, within the device, the characteristics from transistor to transistor are equal, the maximum output high-state voltage (VOH) is approximately the reference voltage (VREF), with minimal deviation from one output to another. This is a large benefit of the TVC solution over discrete devices. Because the fabrication of the transistors is symmetrical, either port connection of each bit can be used as the low-voltage side, and the I/O signals are bidirectional through each FET.