|Package | PIN:||RCP | 64|
|Temp:||C (0 to 70)|
- 1 to 1.6 Gigabits Per Second (Gbps) Serializer/Deserializer (TLK2201B)
- 1.2 to 1.6 Gigabits Per Second (Gbps) Serializer/Deserializer (TLK2201BI)
- Low Power Consumption <200 mW at 1.25 Gbps
- LVPECL Compatible Differential I/O on High Speed Interface
- Single Monolithic PLL Design
- Support For 10 Bit Interface or Reduced Interface 5 Bit DDR (Double Data Rate) Clocking
- Receiver Differential Input Thresholds 200 mV Minimum
- Industrial Temperature Range From -40°C to 85°C (TLK2201BI)
- IEEE 802.3 Gigabit Ethernet Compliant
- Advanced 0.25 µm CMOS Technology
- No External Filter Capacitors Required
- Comprehensive Suite of Built-In Testability
- IEEE 1149.1 JTAG Support
- 2.5-V Supply Voltage for Lowest Power Operation
- 3.3-V Tolerant on LVTTL Inputs
- Hot Plug Protection
- 64-Pin VQFP With Thermally Enhanced Package (PowerPAD™)
PowerPAD is a trademark of Texas Instruments.
Texas Instruments TLK2201BRCP
The TLK2201B and TLK2201BI gigabit ethernet transceivers provide for ultrahigh-speed full-duplex point-to-point data transmissions. These devices are based on the timing requirements of the 10-bit interface specification by the IEEE 802.3 Gigabit Ethernet specification. The TLK2201B supports data rates from 1.0 Gbps through 1.6 Gbps and the TLK2201BI supports data rates from 1.2 Gbps through 1.6 Gbps.
The primary application of these devices is to provide building blocks for point-to-point baseband data transmission over controlled impedance media of 50 . The transmission media can be printed-circuit board traces, copper cables or fiber-optical media. The ultimate rate and distance of data transfer is dependent upon the attenuation characteristics of the media and the noise coupling to the environment.
The TLK2201B and TLK2201BI perform the data serialization, deserialization, and clock extraction functions for a physical layer interface device. The transceiver operates at 1.25 Gbps (typical), providing up to 1 Gbps of data bandwidth over a copper or optical media interface.
The TLK2201B and TLK2201BI support both the defined 10-bit interface (TBI) and a reduced 5-bit interface utilizing double data rate (DDR) clocking. In the TBI mode the serializer/deserializer (SERDES) accepts 10-bit wide 8b/10b parallel encoded data bytes. The parallel data bytes are serialized and transmitted differentially at PECL compatible voltage levels. The SERDES extracts clock information from the input serial stream and deserializes the data, outputting a parallel 10-bit data byte.
In the DDR mode the parallel interface accepts 5-bit wide 8b/10b encoded data aligned to both the rising and falling edge of the reference clock. The data is clocked most significant bit first, (bits 0-4 of the 8b/10b encoded data) on the rising edge of the clock and the least significant bits (bits 5-9 of the 8b/10b encoded data) are clocked on the falling edge of the clock.
The TLK2201B and TLK2201BI provide a comprehensive series of built-in tests for self-test purposes including loopback and pseudorandom binary sequence (PRBS) generation and verification. An IEEE 1149.1 JTAG port is also supported.
The TLK2201B and TLK2201BI are housed in a high performance, thermally enhanced, 64-pin VQFP PowerPAD package. Use of the PowerPAD package does not require any special considerations except to note that the PowerPAD, which is an exposed die pad on the bottom of the device, is a metallic thermal and electrical conductor. It is recommended that the TLK2201B and TLK2201BI PowerPADs be soldered to the thermal land on the board.
The TLK2201B is characterized for operation from 0°C to 70°C. The TLK2201BI is characterized for operation from -40°C to 85°C.
The TLK2201B and TLK2201BI use a 2.5-V supply. The I/O section is 3.3-V compatible. With the 2.5-V supply the chipset is very power-efficient, dissipating less than 200 mW typical power when operating at 1.25 Gbps.
The TLK2201B and TLK2201BI are designed to be hot plug capable. A power-on reset causes RBC0, RBC1, the parallel output signal terminals, TXP, and TXN to be held in high-impedance state.